Formation of In nanoparticles on InP wafers by laser-assisted etching

Laser/Electron Irradiation on Indium Phosphide (InP) Semiconductor: Promising Pathways to In Situ Formation of Indium Nanoparticles

“…The average NPs (diameter) was obtained from the TEM images of the InP samples after the exposure to the electron beam and fs laser irradiation, the corresponding values are presented and compared with previous data reported in the literature in the Table 2 . An analysis of the results renders that the In NPs obtained by electron beam have a small size (5–25 nm) with respect to samples irradiated with fs laser beam (5–200 nm), and these values are in the range of the previous values obtained by Golberg et al and Musaev et al…”

“…Initially, in Figure D, the indexation of the crystallographic planes of the matrix—(111), (200), (220), and (311)—confirms the presence of cubic InP (crystallographic card JCPDS (No. 32‐452), space group ) . In NPs are formed on the surface of the InP sample with the progress of time; after 4 min of exposure to the beam (Figure E), both the amount and size of In NPs increase (Figure F).…”

“…Musaev et al demonstrated the formation of In NPs on InP wafers via laser‐assisted etching and Qian et al analyzed, for the first time, the evolution of periodic structures on InP (100) surface irradiated with an fs laser. The structural and electronic transformations of the InP material are induced.…”

“…The surface effects and the type of generated structures (size, morphology) depend on both laser parameters (e.g., pulses and fluences) and the composition of the materials . When pulsed laser irradiation is used, the ablation or detachment of material may occur through several mechanisms, such as phase explosion, evaporation, spallation, and fragmentation .…”