Formation of InAs/GaAs quantum dots by dewetting during cooling

Abstract

Articles you may be interested inPresentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots

Morphology and stress evolution of InAs QD grown and annealed in-situ at high temperature

“…Similar to the transition from 2D layer-by-layer to 3D island growth, these mounds lead to the reduction of the stress observed in the FF curve. However, the formation of these mounds is not primarily driven by misfit stress, but rather a result of a dewetting process during annealing [12]. According to a theoretical study [13], InAs forms a liquid-like layer on the surface of GaAs at high temperatures above $ 500 3 C. The resulting high mobility allows In atoms to rearrange on the surface, thus providing a kinetic mechanism for the mound formation.…”

Ultrathin type-II GaSb/GaAs quantum wells grown by OMVPE

“…In this case, the interruption of growth allows the dots to nucleate by dewetting of the planar GaSb layer during the cooldown phase, whereas the planar morphology is maintained when the GaSb layer is immediately capped with GaAs. Formation of 3D dots by dewetting during cooldown has been observed previously for InAs layers on GaAs [22]. From the dot volume measured by AFM on the uncapped samples, a rough estimate of the amount of GaSb contained within the dots is obtained.…”