Formation of InAs/InGaAsP quantum-dashes on InP(001)

Lenz, Andreas; Genz, F.; Eisele, H.; Иванова, Л. Д.; Timm, Rainer; Franke, D.; Künzel, H.; Pohl, Udo W.; Dähne, M.

doi:10.1063/1.3265733

Cited by 15 publications

(10 citation statements)

References 20 publications

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“…Very recently, Lenz et al [210] explored the formation of Qdashes on InGaAsP buffer layers on (100) InP grown by MOCVD system. 2.65 ML thick InAs deposition thickness was utilized for Qdash growth in a single and 7 stack structure, separated by 40 nm InGaAsP barrier layers.…”

Section: Qdashes On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Qdashes On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…12,13 XSTM results derived from both the ͑110͒ and the ͑110͒ cleavage surface allow to analyze the atomic structure of the elongated InAs quantum dashes and the observed decomposition of the quaternary matrix material. In addition to a recently published brief overview, 14 here we present a detailed analysis of the atomic structure of the quantum dashes and their stoichiometry as well as of the impact of the quaternary material on the quantum-dash formation. Furthermore, we analyze the observed decomposition of the quaternary material in detail and find a strong structural correlation of the decomposed quaternary layer with the quantum-dash layer and indications for an influence of steps on the growth surface.…”

Section: Introductionmentioning

confidence: 99%

InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition

Genz

Lenz

Eisele

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Cross-sectional scanning tunneling microscopy is used to study the spatial structure and composition of self-assembled InAs nanostructures grown on InGaAsP lattice matched to the InP substrate. Images of the (110) and ((1) over bar 10) cleavage surfaces reveal InAs quantum dashes of different lateral extensions. They are found to be about 60 nm long, about 15 nm wide, about 2 nm high, and to consist of pure InAs. Furthermore, the quaternary InGaAsP matrix material below, in between, and above the quantum-dash layers shows a strong lateral contrast variation, which is related to a partial decomposition into columns of more InAs-rich and more GaP-rich regions. The effect is particularly pronounced along the [110] direction. A quantitative analysis of this strain-induced contrast yields a decomposition characterized by variations of the group-III and/or group-V concentrations in the order of +/- 10%. The data strongly indicate that the strain at the growth surface induced by the decomposition of the underlying matrix material plays an important role for the nucleation and formation of the quantum dashes as well as for their unexpected stacking over interlayer distances as large as 40 nm. Despite of the observation that the quantum dashes enforce the decomposition, which was already developed directly at the InGaAsP/InP interface without any influence of the subsequently grown InAs quantum dashes

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“…Dashes like those found in MBE are only formed by applying unusual growth parameters in terms of growth temperature and/or indium flux. 11 Recently, high quality and thermally stable InAs/InGaAsP/InP QD structures emitting at 1.55 lm were grown by MOVPE. 12 These thermally stable QDs are promising for fabricating QD lasers with characteristics comparable to their MBE-grown counterparts.…”

Section: Introductionmentioning

confidence: 99%

Improved threshold of buried heterostructure InAs/GaInAsP quantum dot lasers

Franke

Moehrle

Sigmund

et al. 2011

Journal of Applied Physics

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The parameters for reducing the threshold current density of InAs/InGaAsP/InP quantum-dot (QD) lasers suitable for high temperature operation are studied. The structures were grown using metalorganic vapor phase epitaxy. Increasing the number of QD layers leads to a substantial improvement of the optical confinement and a markedly reduced threshold per dot layer in broad area devices. A reduction of the spacer thickness between the QD layers was not found to significantly affect device characteristics. Depending upon the device length, an optimum number of QD layers was deduced. Based upon optimized QD stacks, buried-heterostructure lasers with a medium device length emitting at 1.5 m were fabricated. Laterally single-mode devices show promising low threshold currents near 10 mA and good thermal stability with a characteristic temperature of 65 K up to 90 C

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Formation of InAs/InGaAsP quantum-dashes on InP(001)

Cited by 15 publications

References 20 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition

Improved threshold of buried heterostructure InAs/GaInAsP quantum dot lasers

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