Formation of ion tracks in amorphous silicon nitride films with MeV C 60 ions

Kitayama, T.; Morita, Yukari; Nakajima, K.; Narumi, K.; Saitoh, Yoichi; Matsuda, M.; Sataka, M.; Tsujimoto, Masahiko; Isoda, S.; Toulemonde, M.; Kimura, Kenji

doi:10.1016/j.nimb.2015.04.051

Cited by 34 publications

(27 citation statements)

References 18 publications

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“…is smaller than in a-SiO2 possibly resulting from the difference in the optical band gap; (ii) the density change is comparably larger in a-Si3N4 compared to a-SiO2 due to a larger thermal conductivity, which leads to shorter relaxation times, i.e. time for the density change to recover; (iii) the ion tracks are continuous with a morphology exhibiting a core-shell density change distribution where the boundary between the under-dense and the over-dense regions is smooth and can be estimated by a linear function satisfactorily rather than an abrupt transition [2], also supported by the 2T-MD density For amorphous silicon nitride the morphology was ascribed to the high temperature reached in the inner region, surpassing the vaporization point, however no experimental support was provided for this argument [10]. It is in fact questionable if the equilibrium vaporization point is relevant in a spatially enclosed area such as the track area away from the surface where the temperature increase leads to high pressure around the track center.…”

Section: Sio2mentioning

confidence: 96%

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

et al. 2018

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The cylindrical nanoscale density variations resulting from the interaction of 185 MeV and 2.2 GeV Au ions with 1.0 μm thick amorphous SiN :H and SiO :H layers are determined using small angle x-ray scattering measurements. The resulting density profiles resembles an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions, consistent with molecular-dynamics simulations. For amorphous SiN :H, the density variations show a radius of 4.2 nm with a relative density change three times larger than the value determined for amorphous SiO :H, with a radius of 5.5 nm. Complementary infrared spectroscopy measurements exhibit a damage cross-section comparable to the core dimensions. The morphology of the density variations results from freezing in the local viscous flow arising from the non-uniform temperature profile in the radial direction of the ion path. The concomitant drop in viscosity mediated by the thermal conductivity appears to be the main driving force rather than the presence of a density anomaly.

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Section: Sio2mentioning

confidence: 96%

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

et al. 2018

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“…Considering the fact that λ for amorphous materials is significantly lower than that for the same material in its crystalline phase, we use λ = 3 nm for a-SiN. This was chosen so that the observed track radii in a-SiN 21 22 can be reproduced (see Supplementary information ).…”

Section: Resultsmentioning

confidence: 99%

Tracing temperature in a nanometer size region in a picosecond time period

Nakajima

Kitayama

Hayashi

et al. 2015

Sci Rep

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Irradiation of materials with either swift heavy ions or slow highly charged ions leads to ultrafast heating on a timescale of several picosecond in a region of several nanometer. This ultrafast local heating result in formation of nanostructures, which provide a number of potential applications in nanotechnologies. These nanostructures are believed to be formed when the local temperature rises beyond the melting or boiling point of the material. Conventional techniques, however, are not applicable to measure temperature in such a localized region in a short time period. Here, we propose a novel method for tracing temperature in a nanometer region in a picosecond time period by utilizing desorption of gold nanoparticles around the ion impact position. The feasibility is examined by comparing with the temperature evolution predicted by a theoretical model.

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“…Kitayama et al [17] suggested that the evaluation of track sizes in silicon nitride may be achieved within the framework of a two-threshold i-TS model using two free parameters: electron-phonon interaction mean free path λ and boiling energy E b . In this model the boiling phase energy is the threshold for core formation and the melting phase energy for shell formation.…”

Section: I-ts Analysismentioning

confidence: 99%

Latent tracks of swift Bi ions in Si₃N₄

Vuuren¹,

Ibrayeva

Rymzhanov

et al. 2020

Mater. Res. Express

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Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si 3 N 4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a 'core-shell' inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material.

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Formation of ion tracks in amorphous silicon nitride films with MeV C 60 ions

Cited by 34 publications

References 18 publications

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

Tracing temperature in a nanometer size region in a picosecond time period

Latent tracks of swift Bi ions in Si₃N₄

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Formation of ion tracks in amorphous silicon nitride films with MeV C 60 ions

Cited by 34 publications

References 18 publications

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

Tracing temperature in a nanometer size region in a picosecond time period

Latent tracks of swift Bi ions in Si3N4

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Latent tracks of swift Bi ions in Si₃N₄