2008
DOI: 10.1007/s10404-008-0281-9
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Formation of ionic depletion/enrichment zones in a hybrid micro-/nano-channel

Abstract: This study fabricates a cross-form microchip in which the two side channels are attached to the main channel via a nanochannel bridge. Ionic depletion and enrichment zones are established on the anodic and cathodic sides of the nanochannel. Results show that the low conductivity within the depletion zone induces a rapid electroosmotic flow, which in turn prompts the generation of vortex flow structures within the depletion zone. Both the lengthening of the depletion bulk charge layer and decrease in length of … Show more

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Cited by 38 publications
(44 citation statements)
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“…In our early study, we discussed the flow field within the depletion region by experimental and numerical ways. Results showed a fieldamplified effect within the depletion zone induces a rapid electroosmotic flow, which in turn prompts the generation of vortex flow structures within the depletion zone [17].…”
Section: Introductionmentioning
confidence: 99%
“…In our early study, we discussed the flow field within the depletion region by experimental and numerical ways. Results showed a fieldamplified effect within the depletion zone induces a rapid electroosmotic flow, which in turn prompts the generation of vortex flow structures within the depletion zone [17].…”
Section: Introductionmentioning
confidence: 99%
“…20,26 Continuum level modeling has been applied successfully at microscale to numerous problems, such as multiphase heat exchangers, 27 microbubble generation for biomedical applications, 28 and electrokinetic micromixers. 29,30 CONTINUUM AND MOLECULAR MODELS…”
Section: Governing Equationsmentioning
confidence: 99%
“…Some marks are distributed on both glass plates for alignment too. Recently, Huang and Yang (2008) group reported a similar method of forming the glass micronanofluidic chip. Instead of the cross-form microchip in their report, the U-form layout is adopted in our work.…”
Section: Introductionmentioning
confidence: 97%