Formation of metastable aluminum silicide as intermediate stage of Al-Si alloy crystallization

Gordeev, I.; Kolotova, L.N.; Starikov, Sergey N.

doi:10.1016/j.scriptamat.2021.114481

Cited by 7 publications

(3 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3] Layers of low-melting metals on silicon have not been studied enough. The most indicative include works, [4][5][6][7][8][9][10][11][12][13][14][15][16][17] where the atomic and electronic structure of the ultra-thin layers on Si(100) and Si(111) surfaces was studied. Work 7 is of particular interest to us, since it describes in detail first-principles calculations of the electronic structure of the Li-Si(100) system, which is one of the objects of our work.…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure of Li, Be, and Al Ultrathin Coverings on the Si(100) Surface

Zavodinsky,

Gorkusha

2024

Orient J Phys Sciences

View full text Add to dashboard Cite

Within the framework of density functional theory and the pseudopotential method, calculations of the density of electronic states of the system “Si(100) substrate plus disordered two-dimensional metal layers (Li, Be or Al)” with a thickness of one to four single-atomic layers were carried out during growth at 0°K. It is shown that the electronic structure of the first single-atomic layers of these metals on Si(100) has band gaps. The maximum band gap was found in the Be-Si system (1.03 eV for a single-atomic layer). In this system, the band gap disappears when four single-atomic layers are deposited. In the Li-Si system (0.98 eV for a single-atomic layer) it disappears for two single-atomic layers. In the Al-Si–system (0.50 eV with four single-atomic layers), the band gap disappears for three single-atomic layers. This behavior of the band gap can be explained by the passivation of the substrate surface states and the peculiarities of the electronic structure of the adsorbed metals.

show abstract

Section: Introductionmentioning

confidence: 99%

Electronic Structure of Li, Be, and Al Ultrathin Coverings on the Si(100) Surface

Zavodinsky,

Gorkusha

2024

Orient J Phys Sciences

View full text Add to dashboard Cite

show abstract

“…The most indicative include works [1][2][3][4][5][6][7][8][9][10] , where the atomic and electronic structure of the sub-nano Li, Be and Al layers on Si(100) and Si(111) surfaces was studied. In the work of Kotllyar et al [1] , the high-temperature interaction of Al with the Si(100) surface at low coverages was studied using low-energy electron diffraction, Auger electron spectroscopy and scanning tunneling microscopy (STM).…”

Section: Introductionmentioning

confidence: 99%

“…Saranin et al [7] studied ordered arrays of Be-encapsulated Si nanotubes on Si(111) surface using STM. Gordeev, Kolotova and Starikov [8] investigated the formation of metastable aluminum silicide as intermediate stage of Al-Si alloy crystallization. They noted that the mechanism of Al-Si alloy crystallization from an amorphous state is still unclear.…”

Section: Introductionmentioning

confidence: 99%

Sub-nano Layers of Li, Be, and Al on the Si(100) Surface: Electronic Structure and Silicide Formation

Zavodinsky,

Gorkusha

2023

semicond. sci. and inf. n.a.

View full text Add to dashboard Cite

Within the framework of the density functional theory and the pseudopotential method, the electronic structure calculations of the “metal-Si(100)” systems with Li, Be and Al as metal coverings of one to four monolayers (ML) thickness, were carried out. Calculations showed that band gaps of 1.02 eV, 0.98 eV, and 0.5 eV, respectively, appear in the densities of electronic states when the thickness of Li, Be and Al coverings is one ML. These gaps disappear with increasing thickness of the metal layers: first in the Li-Si system (for two ML), then in the Al-Si system (for three ML), and then in the Be-Si system (for four ML). This behavior of the band gap can be explained by the passivation of the substrate surface states and the peculiarities of the electronic structure of the adsorbed metals. In common the results can be interpreted as describing the possibility of the formation of a two-dimensional silicide with semiconducting properties in Li-Si(100), Be-Si(100), and Al-Si(100) systems.

show abstract

Mechanical properties and corrosion behavior of trace Cr-containing Al–9Si–1.2Cu–0.5Mg casting alloy

Zhou,

Wang,

Wang

et al. 2023

Journal of Materials Research and Technology

View full text Add to dashboard Cite

Formation of metastable aluminum silicide as intermediate stage of Al-Si alloy crystallization

Cited by 7 publications

References 14 publications

Electronic Structure of Li, Be, and Al Ultrathin Coverings on the Si(100) Surface

Electronic Structure of Li, Be, and Al Ultrathin Coverings on the Si(100) Surface

Sub-nano Layers of Li, Be, and Al on the Si(100) Surface: Electronic Structure and Silicide Formation

Mechanical properties and corrosion behavior of trace Cr-containing Al–9Si–1.2Cu–0.5Mg casting alloy

Contact Info

Product

Resources

About