Formation of nanoporous organosilicate films using cyclodextrins as a porogen

Park, S.J.; Shin, Jeong-Hyeop; Min, Sung-Kyu; Rhee, Hee‐Woo

doi:10.1016/j.cap.2005.04.031

Cited by 10 publications

(3 citation statements)

References 10 publications

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“…Recently, extremely porous PECVD SiOCH film with k-value as low as 2.0 has been developed [1][2][3]. However, porous SiOCH films are less resistant to chemical and plasma treatments applied during interconnect integration such as dry etch and ash processes, which leads to increase in dielectric constant (k) value.…”

Section: Introductionmentioning

confidence: 99%

Plasma enhanced ALD pore sealing for highly porous SiOCH films with k = 2.0

Kimura¹,

Kobayashi²,

Ishikawa³

et al. 2012

2012 IEEE International Interconnect Technology Conference

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In order to implement highly porous PECVD SiOCH films with k = 2.0 in ILD integration, the UV-assisted restoration to remove plasma damages related with dry etch and pore sealing by plasma enhanced ALD (PEALD)-SiN formation to prevent the metal penetration into the film during subsequent metallization process was investigated. Sequential application of the restoration and pore sealing processes was proved to be the best solution enabling successful sealing capability with preserving pristine k-value of the porous SiOCH films.

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Section: Introductionmentioning

confidence: 99%

Plasma enhanced ALD pore sealing for highly porous SiOCH films with k = 2.0

Kimura¹,

Kobayashi²,

Ishikawa³

et al. 2012

2012 IEEE International Interconnect Technology Conference

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show abstract

“…To reduce resistance-capacitance (RC) delay and power consumption in Si LSIs, porous materials with a low dielectric constant (k) have been introduced as interconnect dielectrics, replacing SiO 2 or dense low-k materials. [1][2][3][4] Recently, extremely porous SiOCH films with a k-value as low as 2.0 have been developed 5,6) by means of plasmaenhanced chemical vapor deposition (PECVD). However, porous SiOCH films are less resistant to chemical and plasma treatments applied during interconnect integration such as dry etching and ashing processes, which leads to an increase in k-value.…”

Section: Introductionmentioning

confidence: 99%

Plasma-Enhanced Atomic Layer Deposition Sealing Property on Extreme Low-k Film with k = 2.0 Quantified by Mass Metrology

Ishikawa¹,

Kobayashi²,

Nakano³

et al. 2013

Jpn. J. Appl. Phys.

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We have investigated plasma-enhanced atomic layer deposition (PEALD) SiN pore-sealing film formation and diffusion behavior on highly porous SiOCH films. Mass measurement revealed the diffusion of the precursor used in PEALD into pores of SiOCH films, which was enhanced for higher-porosity SiOCH films. The diffusion of the precursor into the pores was reduced by applying UV-assisted restoration treatment before the pore-sealing process, which helped the formation of hermetic pore-sealing films. The results indicated that a 1-nm-thick SiN film was sufficient to seal the surface of the restored SiOCH film with k = 2.0. It was found that the decrease in k due to the pore-sealing deposition was as small as 0.02. The results indicated that the sequential application of UV-assisted restoration and PEALD-SiN pore sealing is a promising method of introducing the use of highly porous SiOCH films with k = 2.0 into interconnect integration.

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“…[1][2][3][4] Recently, an extremely porous SiOCH film with a k-value as low as 2.0 has been developed. 5,6) However, porous SiOCH films are less resistant to chemical and plasma treatments applied during interconnect integration such as the dry etch and ash processes, which lead to an increase in k-value. This is explained by the extraction of Si-CH 3 groups in the porous SiOCH film, leaving hygroscopic functional groups such as -OH and Si-OH groups.…”

Section: Introductionmentioning

confidence: 99%

Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0

Kimura¹,

Ishikawa²,

Nakano³

et al. 2012

Jpn. J. Appl. Phys.

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We investigated the effects of UV-assisted restoration on porous plasma-enhanced chemical vapor deposition (PECVD) SiOCH films with k = 2.0 and 2.3 having high porosities. By applying the UV-assisted restoration to O2-plasma-damaged films with k = 2.0 and 2.3, the recovery of the k-value was observed on the k = 2.3 film in proportion to –OH group reduction. However, the k = 2.0 film did not show recovery in spite of –OH group reduction. We found that hydrocarbon content in the k = 2.0 film was significantly increased by the UV-assisted restoration compared with the k = 2.3 film. According to these findings, we optimized the UV-assisted restoration to achieve improved controllability of the hydrocarbon uptake in the k = 2.0 film and confirmed the recovery of the k-value for O2-plasma-damaged film. Thus, adjusting the hydrocarbon uptake was crucial for restoring extremely porous SiOCH film.

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Formation of nanoporous organosilicate films using cyclodextrins as a porogen

Cited by 10 publications

References 10 publications

Plasma enhanced ALD pore sealing for highly porous SiOCH films with k = 2.0

Plasma enhanced ALD pore sealing for highly porous SiOCH films with k = 2.0

Plasma-Enhanced Atomic Layer Deposition Sealing Property on Extreme Low-k Film with k = 2.0 Quantified by Mass Metrology

Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0

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