2018
DOI: 10.1088/1742-6596/1124/4/041024
|View full text |Cite
|
Sign up to set email alerts
|

Formation of nanoscale structures on the surface of gallium arsenide by local anodic oxidation and plasma chemical etching

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2022
2022
2022
2022

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 22 publications
0
1
0
Order By: Relevance
“…Table 1a shows the effect of modulating different plasma currents on the surface roughness of the substrate with a fixed voltage of 250 V and a bombardment time of 20 min. The number of dissociated plasma particles increases as a result of the increased plasma current so that under the same area, the substrate surface is subjected to physical bombardment and chemical etching [22], and the substrate surface roughness increases. Bombarding the PC substrate at higher voltage plasma with the increasing current resulted in poor heat dissipation on the substrate surface and surface melting, thereby causing roughness reduction.…”
Section: The Influence Of Plasma Bombarding On Substrate Surfacementioning
confidence: 99%
“…Table 1a shows the effect of modulating different plasma currents on the surface roughness of the substrate with a fixed voltage of 250 V and a bombardment time of 20 min. The number of dissociated plasma particles increases as a result of the increased plasma current so that under the same area, the substrate surface is subjected to physical bombardment and chemical etching [22], and the substrate surface roughness increases. Bombarding the PC substrate at higher voltage plasma with the increasing current resulted in poor heat dissipation on the substrate surface and surface melting, thereby causing roughness reduction.…”
Section: The Influence Of Plasma Bombarding On Substrate Surfacementioning
confidence: 99%