that is simultaneously sensitive and costeffective. [1e,4] Today, a wide variety of photodetectors based on inorganic and organic semiconductor heterostructures are at our disposal. For example, MoS 2 / pyramid Si heterostructures have enabled the construction of photodiodes with ultrahigh detectivity in self-driven operation mode. [5] In rubrene-7,7,8,8tetracyanoquinodime heterostructures, the charge-transfer interface presents an external quantum efficiency of nearly 100%. [6] Compared with those inorganic and organic semiconductors, the recently emerged organic-inorganic hybrid perovskites provide several specific features to create heterostructures for novel photodetection devices. For instance, their excellent semiconductor properties, including large absorption coefficient, long carrier diffusion length, and high carrier mobility can give rise to efficient photocurrent generation. [7] Furthermore, their unique structural flexibility will enable a wide tunability in the bandgap and dimensionality, allowing for the creation of new heterostructures with exotic device properties. [8] Earlier attempts utilized ion-exchange technique to create 3D/3D MAPbX 3 (X = Br, I) heterostructures, and realized selfpowered photodetectors; [9] since then the advance in structural design extended this material family to 2D/2D systems that exhibit enhanced heterojunction stability; however, at the cost of the device performance. [10] To make a trade-off between the structural stability and device efficiency, notably, recent efforts have been devoted to fabricating 2D/3D hybrid perovskite heterostructures. [11] This integration can combine the hydrophobic properties of 2D perovskites with the superior charge-transport properties of their 3D counterparts, as has been demonstrated by their remarkable implementation in the optoelectronic field. [12] However, until now, those prepared 2D/3D perovskite heterostructures are typically polycrystalline or amorphous, in which the charge transport is usually plagued by unavoidable boundaryinduced defects and rich chemical disorders, limiting the optoelectronic performance of the resulting devices. [13] In contrast, a single-crystalline heterostructure with high crystalline purity and well-defined interface would overcome these obstacles and exhibit impressive improvements: lower intrinsic carrier concentration, higher carrier mobility, and longer carrier diffusion length. [14] Such characteristics make these materials an ideal medium for