Formation of porous silicon on patterned substrates

Krüger, Michael; Arens-Fischer, R.; Thönissen, M.; Münder, H.; Berger, M.; Lüth, H.; Hilbrich, S.; Theiß, W.

doi:10.1016/0040-6090(95)08066-x

Cited by 45 publications

(21 citation statements)

References 3 publications

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“…A thin 5i02 film was deposited between the substrate and the 300nm silicon nitride to avoid cracks and stresses within the Si3N4 layer and the silicon areas to be anodized. In order to prevent that LPCVD Si3N4 be dissolved before the end of the anodization process in the HF/ethanol electrolyte, the samples were heated in an RTA oven at 1080 °C for 10 minutes, using N2 as inert gas [10]. This additional step resulted in a strong decrease of the Si3N4 etch rate as compared with other samples, where this annealing was not applied.…”

Section: Methodsmentioning

confidence: 99%

<title>Micromechanical structure development for chemical analysis: study of porous silicon as an adsorbent</title>

Souza¹,

Galeazzo²,

Silva³

et al. 1999

SPIE Proceedings

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The aim of this work is to investigate the use of microchannels to concentrate pollutants present in the air. Devices with a length of 30 cm, a width of 100 tm and a depth of 30 tim, sealed by anodically bonded glass, were manufactured. Tests of adsorption characteristics were made using n-hexane. To reliably insert N2 contaminated with 1000 ppm of n-hexane in the microstructure, a simple setup was manufactured. This setup allows to insert the reactant, remove the amount of reactant adsorbed and to detect it. An amount of 20 mg was inserted in the microstructure. In order to improve the adsorption characteristics, PS (porous silicon) layers were manufactured in the microchannels using silicon nitride as mask. The sealing of the microstructure with anodic bonded glass showed to be feasible either if the surface presents PS or silicon nitride. Samples of PS layers covered by a plasma polymerized film, produced using HMDS, were analyzed by Raman microscopy. It was noticed that the nanocrystals are completely fulfilled by the deposited material, indicating the high reactivity of the PS layer.

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Section: Methodsmentioning

confidence: 99%

<title>Micromechanical structure development for chemical analysis: study of porous silicon as an adsorbent</title>

Souza¹,

Galeazzo²,

Silva³

et al. 1999

SPIE Proceedings

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“…Si dioxide can be used for short anodization times [32,35]. Stoichiometric silicon nitride and silicon carbide induces stress problems leading to cracking [32,36]. However, nonstoichiometric silicon nitride is a good masking material.…”

Section: Effect Of Anodization Conditionsmentioning

confidence: 99%

Silicon Nanocrystals in Porous Silicon and Applications

Gelloz

2010

Silicon Nanocrystals

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“…The usual choice for masking is the deposition of thin films, such as polysilicon over silicon dioxide [10] and silicon nitride [9] or carbonitride (SiCN) [11]. Additionally, the current blocking can be obtained through n-type doping (such as phosphorous) by ion implantation into p-type silicon substrates [12].…”

Section: Introductionmentioning

confidence: 99%

Silicon Field-Emission Devices Fabricated Using the Hydrogen Implantation–Porous Silicon (HI–PS) Micromachining Technique

Dantas

Galeazzo

Peres

et al. 2008

J. Microelectromech. Syst.

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This paper presents a relatively simple method to fabricate field-emitter arrays from silicon substrates. These devices are obtained from silicon micromachining by means of the HI-PS technique-a combination of hydrogen ion implantation and porous silicon used as sacrificial layer. Also, a new process sequence is proposed and implemented to fabricate self-aligned integrated field-emission devices based on this technique. Electrical characteristics of the microtips obtained show good agreement with the Fowler-Nordheim theory, which are suitable for the proposed application.[ 2008-0054]Index Terms-Field emission (FE), hydrogen implantation (HI), microtips, porous silicon (PS), silicon micromachining.

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Formation of porous silicon on patterned substrates

Cited by 45 publications

References 3 publications

<title>Micromechanical structure development for chemical analysis: study of porous silicon as an adsorbent</title>

<title>Micromechanical structure development for chemical analysis: study of porous silicon as an adsorbent</title>

Silicon Nanocrystals in Porous Silicon and Applications

Silicon Field-Emission Devices Fabricated Using the Hydrogen Implantation–Porous Silicon (HI–PS) Micromachining Technique

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