Formation of Self-Assembled Monolayers of Alkanethiols on GaAs Surface with in Situ Surface Activation by Ammonium Hydroxide

Baum, Theo; Ye, and Shen; Uosaki, Kohei

doi:10.1021/la991124w

Cited by 72 publications

(64 citation statements)

References 31 publications

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“…For conventional electronics applications, TAM offers a potentially superior passivation for stabilizing completed devices or for preparing devices for regrowth after processing. For biosensor applications, the organic sulfide solutions closely match those reported for preparation of self-assembled monolayers on GaAs, 16 therefore, the TAM passivation can serve as a benchmark in the development of InAs-based biointerfaces. 4 One of the authors ͑D.Y.P.͒ thanks Dr. Jennifer C. Sullivan for help with the etching experiment.…”

Section: Performing Organization Name(s) and Address(es)mentioning

confidence: 75%

Surface passivation of InAs(001) with thioacetamide

Petrovykh

Long

Whitman

2005

Applied Physics Letters

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Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. We describe the passivation of InAs͑001͒ surfaces with thioacetamide ͑CH 3 CSNH 2 or TAM͒ as an alternative to the standard sulfur passivation using inorganic sulfide ͑NH 4 ͒ 2 S x . Quantitative comparison using x-ray photoelectron spectroscopy ͑XPS͒ demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications.

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Section: Performing Organization Name(s) and Address(es)mentioning

confidence: 75%

Surface passivation of InAs(001) with thioacetamide

Petrovykh

Long

Whitman

2005

Applied Physics Letters

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“…The deposition procedure for SAMs on GaAs was based on prior work [12,[39][40][41]. Prior to deposition, wafers were cleaned with acetone for 10 min, followed by etching with 30% NH 4 OH for 1 min to remove the oxide.…”

Section: Sample Preparationmentioning

confidence: 99%

Electrochemical impedance spectroscopy of carboxylic-acid terminal alkanethiol self assembled monolayers on GaAs substrates

Camacho-Alanis

Castaneda

et al. 2010

Electrochimica Acta

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“…[12,16] However, whereas oxide regrowth is remarkably inhibited at the thiol/GaAs interface, [17] surface coverage is often incomplete, [16,18] and the monolayer films are gradually disrupted over the course of hours to days unless they are stored in an inert atmosphere. [15] To improve thiol binding to the GaAs surface, in-situ etching methods have been introduced to avoid oxide regrowth on freshly etched substrates, [19,20] which would otherwise occur immediately upon exposure to air. [21] It was recently suggested that ODT surfaces, assembled with a photochemical etching method, keep impedance spectra stable for several hours in an aqueous electrolyte solution under conditions of zero-current potential.…”

Section: Introductionmentioning

confidence: 99%

Corrosion Protection and Long-Term Chemical Functionalization of Gallium Arsenide in an Aqueous Environment

et al. 2002

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The chemical instability of the gallium arsenide surface poses a serious limitation to its use under ambient conditions, such as in air or aqueous solution. It is shown that both bare GaAs and GaAs coated with self‐assembled monolayers of organic alkanethiols are continuously etched in aqueous environments, which limits their use as biosensor devices in physiological environments. A corrosion protection material having long‐term stability (“chemical passivation”) and biocompatibility (“biological passivation”) with the GaAs surface was found to be interfacial layers of polymerized organic mercaptosilanes a few tens of nanometers thick. The mercaptosilanes not only provided a nearly perfect corrosion protection of GaAs in water, but they also have the potential to introduce chemical groups that allow easy, further surface functionalization. Characterization of the interfacial polymer layer and its protective role was done by atomic force microscopy (AFM), ellipsometry, contact angle measurements, and atomic absorption spectroscopy (AAS). The interfacial polymer layers fully suppressed the release of arsenic into the electrolyte buffer and also provided an adhesion‐promoting interface, which allowed the cultivation of electrically excitable cells, normal rat kidney (NRK) fibroblasts, on GaAs. The electrical performance of GaAs and GaAs/InGaAs heterostructures in water was monitored via cyclic voltammetry and the IU characteristics of field‐effect channels. GaAs was significantly stabilized by the insulating polymeric surface coatings, even under moderate electrochemical loads. These findings are promising for, e.g., the implementation of GaAs technology in future cell–semiconductor hybrids.

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Formation of Self-Assembled Monolayers of Alkanethiols on GaAs Surface with in Situ Surface Activation by Ammonium Hydroxide

Cited by 72 publications

References 31 publications

Surface passivation of InAs(001) with thioacetamide

Surface passivation of InAs(001) with thioacetamide

Electrochemical impedance spectroscopy of carboxylic-acid terminal alkanethiol self assembled monolayers on GaAs substrates

Corrosion Protection and Long-Term Chemical Functionalization of Gallium Arsenide in an Aqueous Environment

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