2016
DOI: 10.1109/jmems.2016.2617198
|View full text |Cite
|
Sign up to set email alerts
|

Formation of SiO2/Si3N4/SiO2Positive and Negative Electrets on a Silicon Substrate

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 54 publications
0
3
0
Order By: Relevance
“…To be more precise, the amphoteric traps in SiN x electret, which are caused by the dangling bonds, are responsible for the surface charging 41 . In this model, both electron and hole charge states are charged attributed to the trivalent Si (Si 3+ ) center.…”
Section: Characterizations Of the Sin X Electretmentioning
confidence: 99%
“…To be more precise, the amphoteric traps in SiN x electret, which are caused by the dangling bonds, are responsible for the surface charging 41 . In this model, both electron and hole charge states are charged attributed to the trivalent Si (Si 3+ ) center.…”
Section: Characterizations Of the Sin X Electretmentioning
confidence: 99%
“…Electret materials have been used in various fields, such as pressure sensors, barometers and acoustic transducers in microphones [1][2][3][4][5] , thanks to the quasipermanent electric charge feature in electrets. Recently, electrets have been explored for use in new applications in MEMS vibration energy harvesters that are based on electrostatic induction [6][7][8][9][10][11][12] .…”
Section: Introductionmentioning
confidence: 99%
“…Their use for applications is not a recent trend and a renewed interest has accelerated in the recent years with the motivation to replace conventional polluting and cumbersome embedded batteries and to facilitate the development of fully autonomous EEH particularly for wireless applications . Oxides such as silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), combined SiO 2 /Si 3 N 4 , or aluminum oxide (Al 2 O 3 ) have proven to be interesting electrets for integration in microelectromechanical systems (MEMS) . However, these oxides cannot be chosen if it is desired to develop flexible or large‐scale transducers that exceed the conventional dimensions found in MEMS and also for low‐cost transducers.…”
Section: Introductionmentioning
confidence: 99%