Formation of SiO2 Nanowires by Local Anodic Oxidation Process via AFM Lithography for the Fabrication of Silicon Nanowires

Yaacob, Khatijah Aisha; Yusoh, Siti Noorhaniah; Alias, Nurain Najihah; Abdullah, Ahmad Makarimi

doi:10.1201/9781351266727-11

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“…Silicon nanowires (SiNWs) are categorized as one-dimensional (1D) nanomaterials with diameters in the range of 2 to 100 nm, exhibiting two types of conductivity—p-type and n-type conductivity [ 1 , 2 , 3 ]. Silicon nanowires can be fabricated by using two approaches—bottom-up or top-down—with controllable compositions, morphologies, structures, and dimensions [ 1 , 4 , 5 ].…”

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confidence: 99%

Study on the Physical Properties of a SiNW Biosensor to the Sensitivity of DNA Detection

Yusoh

Yaacob

2021

Materials

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SiNW (silicon nanowire) arrays consisting of 5- and 10-wires were fabricated by using an atomic force microscope—the local anodic oxidation (AFM-LAO) technique followed by wet chemical etching. Tetramethylammonium hydroxide (TMAH) and isopropyl alcohol (IPA) at various concentrations were used to etch SiNWs. The SiNWs produced were differed in dimension and surface roughness. The SiNWs were functionalized and used for the detection of deoxyribonucleic acid (DNA) dengue (DEN-1). SiNW-based biosensors show sensitive detection of dengue DNA due to certain factors. The physical properties of SiNWs, such as the number of wires, the dimensions of wires, and surface roughness, were found to influence the sensitivity of the biosensor device. The SiNW biosensor device with 10 wires, a larger surface-to-volume ratio, and a rough surface is the most sensitive device, with a 1.93 fM limit of detection (LOD).

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