Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

Никифоров, А. И.; Тимофеев, В. А.; Mashanov, V. I.; Азаров, И. А.; Loshkarev, I. D.; Володин, В. А.; Gulyaev, D. V.; Chetyrin, I.A.; Korolkov, Ilya V.

doi:10.1016/j.apsusc.2020.145735

Cited by 50 publications

(22 citation statements)

References 47 publications

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“…This was shown in our previous works [5,31]. An increase in the Raman signal from the silicon substrate occurred due to a decrease in the absorption of electromagnetic radiation in the layers of tin oxides SnO and SnO 2 formed by annealing [5]. We also observed an increase of the photoluminescence intensity in the infrared region from SiSn films, obtained by the vaporliquid -solid mechanism and containing β-Sn nanoislands on silicon pedestals, with an increase in their annealing temperature [31].…”

Section: Resultssupporting

confidence: 84%

“…In contrast to the metal β-Sn, the transmission of films with SnO and SnO 2 phases increases. This was shown in our previous works [5,31]. An increase in the Raman signal from the silicon substrate occurred due to a decrease in the absorption of electromagnetic radiation in the layers of tin oxides SnO and SnO 2 formed by annealing [5].…”

Section: Resultssupporting

confidence: 59%

“…Tin oxides and GeSiSn compounds combined in one structure are promising for use in multispectral imaging systems [1,2], since they exhibit photoluminescence signals in the visible and infrared wavelength ranges [3][4][5][6][7][8]. By varying the tin content in the GeSiSn solid solution layer, one can adjust the band gap of the material and vary the optical properties from the near to mid infrared range [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

et al. 2021

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A hybrid material including tin oxides on the top of a Ge 0.3 Si 0.7-y Sn y /Si multiple quantum well structure has been first obtained. Tin oxides such as SnO and SnO 2 were formed as a result of phase transitions during the oxidation of polycrystalline tin films (β-Sn). The photoluminescence was demonstrated with a maximum intensity at about 2.34 eV, which corresponds to the band gap of SnO. The glow at the photogeneration point is seen in green. The photoluminescence from SnO is observed after the annealing in the temperature range of 300-400 °C. An increase in the annealing temperature leads to a sharp quenching of the photoluminescence. It is associated with the phase transition from SnO to SnO 2 . The growth of Ge 0.3 Si 0.7-y Sn y /Si multilayer structures is studied at the Sn content from 0 to 18%. It was found that GeSiSn compounds are thermally stable in the annealing temperature range of 300-550°C. In addition to the photoluminescence signal in the visible range from tin oxides, the photoluminescence signal in the infrared range of about 3 μm appears. It is formed from the GeSiSn/Si structure.

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Section: Resultssupporting

confidence: 84%

Section: Resultssupporting

confidence: 59%

Section: Introductionmentioning

confidence: 99%

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Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

et al. 2021

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“…GeSiSn compounds are of interest for their use in multispectral imaging systems [1,2], since they demonstrate a photoluminescence signal in the infrared wavelength of various ranges [3][4][5][6][7][8]. By changing the tin content in the GeSiSn solid solution layer, it is possible to adjust the band gap of the material and change the optical properties from the near to the far infrared range [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Material based on multilayer periodic structures with GeSiSn pseudomorphic layers

Nikiforov

Тимофеев

Mashanov

et al. 2021

УФЖ

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The growth of multilayer structures with Ge0.3Si0.7-yGey/Si heterojunction at tin content from 0 to 18% was studied. The X-ray diffractometry method shows the presence of strict periodicity of layers and a high level of tin content. It has been established that GeSiSn compounds are thermally stable in the annealing temperature range of 300-550 °C. A photoluminescence signal in the infrared range of about 3 microns is observed from a structure with pseudomorphic GeSiSn layers.

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“…14,15 SnO thin films have been grown by various methods, such as electron-beam evaporation 16 or reactive DC magnetron sputtering, 13 both followed by thermal annealing, reactive ion beam sputter deposition, 9 pulsed laser deposition (PLD) from an oxide target 10,12,17 or a metallic Sn target 18 , and molecular beam epitaxy (MBE). 8,19,20 The largest challenge for the growth of phase pure SnO is its metastability with respect to its stable relatives Sn and SnO 2 .…”

Section: Introductionmentioning

confidence: 99%

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Budde

Mazzolini

Feldl

et al. 2020

Phys. Rev. Materials

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Transparent conducting or semiconducting oxides are an important class of materials for (transparent) optoelectronic applications and -by virtue of their wide band gaps -for power electronics. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100 cm 2 /Vs, p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (< <1 cm 2 /Vs) hole mobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higher hole mobility yet is currently lacking a well-established understanding of its hole transport properties. Moreover, growth of SnO is complicated by its metastability with respect to SnO 2 and Sn, requiring epitaxy for the realization of single crystalline material typically required for high-end applications. Here, we give a comprehensive account on the epitaxial growth of SnO, its (meta)stability, and its thermoelectric transport properties in the context of the present literature. Textured and single-crystalline, unintentionally-doped p-type SnO(001) films are grown on Al 2 O 3 (00.1) and Y 2 O 3 -stabilized ZrO 2 (001), respectively, by plasma-assisted molecular beam epitaxy and the epitaxial relations are determined. The metastability of this semiconducting oxide is addressed theoretically through an equilibrium phase diagram. Experimentally, the related SnO growth window is rapidly determined by an in-situ growth kinetics study as function of Sn-to-O-plasma flux ratio and growth temperature. The presence of secondary Sn and SnO x (1 < x ≤ 2) phases is comprehensively studied by x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy, indicating the presence of Sn 3 O 4 or Sn as major secondary phases, as well as a fully oxidized SnO 2 film surface. The hole transport properties, Seebeck coefficient, and density-of-states effective mass are determined and critically discussed in the context of the present literature on SnO, considering its strongly anisotropic effective hole mass: Hall measurements of our films reveal room temperature hole concentrations and mobilities in the range of 2•10 18 to 10 19 cm −3 and 1.0 to 6.0 cm 2 /Vs, respectively, with consistently higher mobility in the single-crystalline films. Temperature-dependent Hall measurements of the single-crystalline films closest to stoichiometric, phase-pure SnO indicate non-degenerate band transport by free holes (rather than hopping transport) with dominant polar optical phonon scattering at room temperature. Taking into account the impact of acceptor band formation and the apparent activation of the hole concentration by 40-53 meV, we assign tin vacancies rather than their complexes with hydrogen as the unintentional acceptor. The room temperature Seebeck coefficient in our films confirms p-type conductivity by band transport. Its combination with the hole concentration allows us to experimentally estimate the density of states effective hole mass to be in the range of 1 to 8 times ...

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Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

Cited by 50 publications

References 47 publications

Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

Material based on multilayer periodic structures with GeSiSn pseudomorphic layers

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

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