1991
DOI: 10.1016/0038-1098(91)90801-2
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Formation of strained superlattices with a macroscopic period via spinodal decomposition of III–V semiconductor alloys

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1991
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Cited by 19 publications
(4 citation statements)
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“…The stability of epitaxial A 1−x B x alloy films and strained A p B q superlattices depends on (i) the energies of coherently strained constituents A and B, and (ii) the formation energy of A 1−x B x or A p B q itself. Regarding (i), previous theoretical studies 18,[43][44][45][46][47][48][49][50][51][52][53][54][55][56] have described these energies using harmonic models, but we are interested here in large strains for which the harmonic theory could break down. Thus, we develop a generalization of previous methods to treat the anharmonic epitaxial strain energies of the con-stituents.…”
Section: Introductionmentioning
confidence: 99%
“…The stability of epitaxial A 1−x B x alloy films and strained A p B q superlattices depends on (i) the energies of coherently strained constituents A and B, and (ii) the formation energy of A 1−x B x or A p B q itself. Regarding (i), previous theoretical studies 18,[43][44][45][46][47][48][49][50][51][52][53][54][55][56] have described these energies using harmonic models, but we are interested here in large strains for which the harmonic theory could break down. Thus, we develop a generalization of previous methods to treat the anharmonic epitaxial strain energies of the con-stituents.…”
Section: Introductionmentioning
confidence: 99%
“…It occurs when the enthalpy of binary compounds is positive and the alternating alloy composition is energetically favorable. The effect was observed previously in bulk of liquid and solid solutions and later was expanded on epitaxial films [3]. Typical period of composition-modulation in epitaxial films is of the order of a film thickness, i.e.…”
Section: Introductionmentioning
confidence: 54%
“…Great opportunities to produce different types of self-ordering nanostructures such as quantum wires and crystallography-oriented quantum dot systems are provided by means of a method of molecular beam epitaxy [180], as well as ion implantation and non-equilibrium impurity diffusion methods [181]. As the method of atomic layer deposition (ALD) [182], they are widely applied in modern technology of semiconductors and nanoelectronics in the synthesis of other functional materials in planar technology [183][184][185].…”
Section: Fig 16 the Distribution Of Stationary (A) And Flash (B) Mamentioning
confidence: 99%