Formation of submicron relief structures on the surface of sapphire substrates

Abstract

An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam etching through a protective mask formed by photolithography. The main problems in creating a microrelief on the surface of sapphire substrates are the removal of static electric charge in the process of ion beam etching of the substrates, as well as obtaining a protective mask with windows of specified sizes, through which etching of the sapphire substrate is performed.