Formation of the Si/Ti interface

Palácio, Carlos; Arranz, Antonio Fernández de Buján y

doi:10.1016/j.apsusc.2006.09.031

Cited by 11 publications

(5 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Deposition of small quantities of Ti onto clean, well-characterized Si (111) at room temperature gave rise to the formation of titanium silicide (TiSi), in agreement with results reported elsewhere (13,14). Also in agreement with earlier observations (13), increasing the amount of Ti shifted the BE of the Ti 2p 3/2 XPS feature of this silicide toward lower values (solid square curve, Fig.…”

Section: Resultssupporting

confidence: 90%

The Platinum/Titanium Nitride Interface: X-ray Photoelectron Spectroscopy Studies

et al. 2011

View full text Add to dashboard Cite

X-ray photoelectron spectroscopy (XPS) has been used to examine the nature of the interactions between Pt and Ti nitride formed in situ by Ti deposition in a nitrogen atmosphere on Si (111) surfaces in ultrahigh vacuum (UHV). The 4f 7/2 electron binding energy of the initially deposited Pt corresponded to that of the intermetallic compound PtTi. Increasing the amount of deposited Pt shifted the binding energy toward that of metallic Pt. Complementary angleresolved XPS revealed that Pt remains on the outer surface region of the resulting multicomponent film. The results show that TiN layers with a thickness of only ca. 1 nm already form an effective barrier to Pt diffusion at room temperature.

show abstract

Section: Resultssupporting

confidence: 90%

The Platinum/Titanium Nitride Interface: X-ray Photoelectron Spectroscopy Studies

et al. 2011

View full text Add to dashboard Cite

show abstract

“…1). [4][5][6] The binding energy (BE) of the Ti 2p 3/2 XPS feature of this silicide, 454.09 eV, was significantly higher compared to that of a metallic Ti standard recorded in the same system, i.e. 453.75 (see Fig.…”

Section: Resultsmentioning

confidence: 84%

The Platinum|Titanium Nitride Interface: X-ray Photoelectron Spectroscopy Studies

Matic,

Chottiner,

Ernst

et al. 2011

Meet. Abstr.

View full text Add to dashboard Cite

show abstract

“…The same behavior of Si and Ti 2p peaks, which is only Si 2p peaks shifted to lower binding energy without any peak shift of metallic Ti 2p peaks, reported that corresponds to a formation of Ti silicide at the interface. 29) MacEtch can generally be explained as a microscopic electrochemical cell at the Si surface with a metal catalyst in the mixture of the HF and H 2 O 2 solution. 12,13,30) The MacEtch process is initiated by the reduction of H 2 O 2 at the surface of the metal catalyst acting as a cathode.…”

Section: Resultsmentioning

confidence: 99%

Effect of a metal interlayer under Au catalyst for the preparation of microscale holes in Si substrate by metal-assisted chemical etching

Shimizu¹,

Niwa²,

Ito³

et al. 2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Vertical microscale holes in Si(100) substrate were formed using a wet chemical method, metal-assisted chemical etching (MacEtch), with patterned Au catalyst films. Three types of samples were prepared for the MacEtch process: Au/Si, Au/SiO2/Si and Au/Ti/Si. To obtain well-defined holes in the Si substrate, the usefulness of an interlayer between the metal catalyst and the Si substrate was demonstrated. Here, the effect of the interlayer is discussed. The suppression of interdiffusion between the catalyst Au and the Si substrate by the interlayer was important to maintain the shape of the patterned catalyst layers, which influenced the morphology of the etched Si.

show abstract

Formation of the Si/Ti interface

Cited by 11 publications

References 27 publications

The Platinum/Titanium Nitride Interface: X-ray Photoelectron Spectroscopy Studies

The Platinum/Titanium Nitride Interface: X-ray Photoelectron Spectroscopy Studies

The Platinum|Titanium Nitride Interface: X-ray Photoelectron Spectroscopy Studies

Effect of a metal interlayer under Au catalyst for the preparation of microscale holes in Si substrate by metal-assisted chemical etching

Contact Info

Product

Resources

About