[b] ((Dedication, optional)) We study the interface between carbon nanotubes (CNTs)
IntroductionCarbon nanotubes appear as a good candidate to replace stateof-the-art inlaid copper interconnects in microprocessors. A key step for integration of CNTs in actual devices is the formation of stable and low-resistance ohmic contacts. Experimental results and calculations seem to agree that Ti and Pd are the best candidates for contacts in carbon nanotube based devices [1][2][3][4][5][6][7][8] . They are superior to conventional metals previously used in electronics such as Au, Al, and Pt which have associated high resistance Schottky barriers. Theoretical studies of pure metals on graphite suggest Ti as the best metal for contacts followed by Pd 5 , yet while low resistance Ohmic contacts have been experimentally reported in the case of Ti [1][2][3] , experimental results give Pd as the best choice due to better reliability and reproducibility 2,6 . One of the reasons invoked for this discrepancy is the high chemical reactivity of Ti compared to the other metals 2,6,9 : in realistic systems titanium oxidation occurs. But until now, no chemical study of the Ti/nanotube interface has been carried out in order to understand the phenomenon, nor supporting theoretical calculations.In this paper, we investigate the growth, electronic structure and chemical composition of Ti atoms on multiwall carbon nanotubes (MWNTs) by transmission electron microscopy (TEM), core levels photoemission spectroscopy (XPS) and density functional calculations.
Results and DiscussionEvaporation of Ti on pristine MWCNTs leads to continuous amorphous coverage of the nanotube surface, even for small amounts of evaporated metal. High resolution TEM images in Figure 1 show that the film is continuous from at least 1 nm coverage; unlike for example Pd which shows isolated particle formation.Calculations for small Ti clusters confirm the tendency of Ti to wet the carbon surface. A single Ti atom strongly binds to graphene (2.64 eV), with Ti above a hexagon centre with short Ti-C bonds (2.24 Å), in good agreement with previous studies 10 . We have examined a range of 2D and 3D structures for Ti n on 2 graphene (n=1-4). For each cluster size the most stable structure is planar parallel to the graphene (see Figure 2). This is in contrast to Ti 4 in the gas phase where we find the most stable form is tetrahedral, in agreement with previous Ti cluster calculations 11 . A continuous monolayer of epitaxial Ti forms a buckled layer on average 2.0 Å above the graphitic layer, with Ti-C distances of 2.13 Å or 2.39 Å depending on whether the Ti atom lies above C atoms or hexagon centres respectively. In this case our binding energy is 5.43 eV/Ti atom. Our calculated barrier for Ti diffusion on the graphitic surface is 0.75 eV, as compared to ~0.1eV for Au and Pd. Thus while a simple first order Arhennius type equation with the Debye attempt frequency (10 13 Hz) suggests that isolated Au or Pd atoms on the graphitic surface at room temperature will be moving...