Formation of TiSi₂ on nitrogen ion implanted (001)Si

Abstract

Formation of TiSi 2 on nitrogen ion implanted (001)Si has been investigated. Nitrogen ion implantation was found to suppress the B and As diffusion in silicon. For Ti on 30 keV BF 2 1 -20 keV N 2 1 and 30 keV As 1 -20 keV N 2 1 implanted samples, a continuous low-resistivity TiSi 2 layer was found to form in all samples annealed at 700-900 ± C. For Ti on 1 3 10 15 ͞cm 2 N 2 1 -and As 1 implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 ± C. The results indicated that with appropriate control, N 1 -implantation can be successfully implemented in forming low-resistivity TiSi 2 contacts on shallow junctions in deep submicron devices.