Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen

Morgan, A. E.; Broadbent, E. K.; Reader, A. H.

doi:10.1557/proc-52-279

Cited by 25 publications

(14 citation statements)

References 10 publications

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“…Similar results have been previously reported by Haken, Brat, Delfino and Okamoto [6,17,18,19] under N 2 , Ar and NH ambients. Nitrogen reacts with Ti on the surface and forms a layer 9f Ti N .…”

supporting

confidence: 91%

The Effects of Processing Ambient on the Reaction Rate of Ti and Si Using Rapid Thermal Processing

Kermani¹,

Farnam

Stultz³

1986

MRS Proc.

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The reaction rate of sputter deposited Ti films on c-Si as a function of process ambient was studied.Sintering temperatures ranging from 600 to 1100 0 C, under pure ammonia, forming gas, nitrogen and argon were used. The additional effect of a reactively sputtered TiN cap on the reaction rate was also investigated.Processed films were then analyzed using AES, RBS and four point probe resistivity mapping.It was found that for temperatures below 700 0 C, an ammonia ambient has the most pronounced effect on reducing the rate of formation of titanium silicide, followed by forming gas (N 2 /H 2 10% vol), nitrogen and argon. Additionally, the presence of the TiN cap further reduced the reaction rate while exhibiting significant diffusion of nitrogen into the silicide film.For the samples annealed in ambients containing nitrogen, a thin layer of Ti N was simultaneously formed on top of the silicide film.The thickness an6 9toichiometry of this titanium nitride films were then correlated with the sintering temperature and ambient.The details of these findings and their impact on the formation of the self-aligned titanium silicide (salicide) will be presented.

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supporting

confidence: 91%

The Effects of Processing Ambient on the Reaction Rate of Ti and Si Using Rapid Thermal Processing

Kermani¹,

Farnam

Stultz³

1986

MRS Proc.

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“…TiSi 2 is chosen for its low resistivity, high-temperature stability, and good compatibility with current MOS processing. 10,12,and 14) and inert 12,17 ambients. An N z ambient is essentiaf-5 for the initial anneal to suppress lateral diffusion of Si into the Ti deposited on the sidewall spacers which could cause short circuiting between adjacent gate and source/drain regions.…”

Section: Introductionmentioning

confidence: 99%

Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing

Morgan

Broadbent

Ritz

et al. 1988

Journal of Applied Physics

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123

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“…3 In this paper we discuss in detail the effect of temperature, time and initial Ti film thickness on TiN formation. In the first process, a Ti-film deposited on Si is annealed in nitrogen at temperatures in excess of 600°C, which results in the formation of a TiN/TiSi 2 double-layer structure.…”

Section: Introductionmentioning

confidence: 99%

I n s i t u investigation of TiN formation on top of TiSi2

Willemsen¹

1988

Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena

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In situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49-C54 transformation Kinetics of the formation of C49 TiSi2 from TiSi multilayers as observed by in situ stress measurements TiN formation on TiSi 2 has been studied using in situ Rutherford backscattering spectroscopy and Auger electron spectroscopy. Two systems were investigated: (i) the reaction of Ti with nitrogen and Oi) the nitridation of TiSi 2 • When a Ti film on Si is annealed in N z or NH 3 , two reactions occur simultaneously: TiN forms at the surface and TiSi 2 at the interface. Oxygen, dissolved in the original Ti film, is expelled from the growing silicide and is piled up at the TiN/ TiSi2 interface. Around 600 ·C, the complete conversion of the upper nitrogen-containing layer into TiN is retarded by this oxygen and a TiN x OJ __ x layer remains detectable between the TiN and TiSi 2 1ayers. At 750°C, the TiN layer is formed very rapidly and further growth is blocked by the TiSi 2 layer that has developed underneath. Nitridation of TiSi 2 requires a temperature of at least 800 °C. Starting at the exposed surface, the silicide layer is gradually converted into TiN. Some of the Si released in this reaction segregates to the surface and forms islands. Most of the Si, however, segregates to the Si substrate where epitaxial regrowth occurs. Nitridation of TiSi 2 , therefore, results in rough layer structures, in contrast to nitridation ofTi on Si. The differences in layer morphology for these two processes are clearly evidenced by transmission electron microscopy cross sections.

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Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen

Cited by 25 publications

References 10 publications

The Effects of Processing Ambient on the Reaction Rate of Ti and Si Using Rapid Thermal Processing

The Effects of Processing Ambient on the Reaction Rate of Ti and Si Using Rapid Thermal Processing

Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing

I n s i t u investigation of TiN formation on top of TiSi2

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