Formation of transparent and ohmic ZnO:Al/MoSe2 contacts for bifacial Cu(In,Ga)Se2 solar cells and tandem structures

Aluminum doped zinc oxide wide band-gap n-type optical window for μc-Si superstrate solar cell

“…The lowest resistivity value was 1.56 x 10 -4 Ω.cm for a thickness of 200 nm, this is due to the high electron concentration (9.18 x 10 20 cm -3 ). The values are in good agreement with the ones reported in [20].…”

Bifacial Cu(In,Ga)Se2 solar cells with submicron absorber thickness: back-contact passivation and light management

“…This step was implemented to improve the absorber quality and to convert the thin metallic Mo layer into semi-transparent MoSe 2 as indicated by results of Rostan et al [12].…”

CuIn1−xGaxSe2 photovoltaic devices for tandem solar cell application

“…Since the electrical contact between ZnO:Al and CIGS shows strong rectifying behaviour [10], a Mo layer of 5 to 10 nm thickness was deposited to achieve a quasi-ohmic contact between the absorber and the ZnO:Al back contact. This opaque layer is transformed into a semitransparent molybdenum selenide layer during the CIGS deposition and it facilitates the quasi-ohmic contact between the absorber and the TCO as described elsewhere [5,11]. Furthermore, this molybdenum layer can enhance cell performance by hindering the formation of a gallium oxide layer at the absorber/back contact interface, which could be n-type and highly resistive [12,13].…”

“…In this paper, ZnO:Al was investigated as a back contact for CIGS. Up to now, conversion efficiencies of 13.4% on both ZnO:Al and ZnO:Ga have been reported [5,6].…”