Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing

Ong, K. K.; Pey, K. L.; Lee, Pooi See; Wee, Andrew Thye Shen; Chong, Y. F.; Yeo, K. L.; Wang, X. C.

doi:10.1016/j.mseb.2004.07.025

Cited by 21 publications

(7 citation statements)

References 6 publications

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“…However, the significance of liquids has greatly increased due to the utilization of ultrafast pulsed laser melting techniques in semiconductor processing, enhancing the electrical properties of the material in specific regions. The applications are diverse: initially, laser melting was used to increase the quantity of active dopants and improve the crystal quality of the material during regrowth. − Recently, the nonequilibrium regime created by pulsed lasers has also been exploited to achieve conditions of ultradoping and hyper-doping. In these cases, the concentration of active dopants can reach atomic percentages as high as 5–10%, exceeding the crystal solubility limit.…”

Section: Introductionmentioning

confidence: 99%

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Ricciarelli,

Deretzis,

Calogero

et al. 2024

J. Phys. Chem. C

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The properties of liquid Si−Ge binary systems under melting conditions deviate from those expected by the ideal alloy approximation. Particularly, a nonlinear dependence of the dielectric functions occurs with the reflectivity of liquid Si−Ge reaching a maximum at 50% Ge content, which is 10% higher than in pure Si or Ge. Using ab initio methodologies, we modeled liquefied Si−Ge alloys, unveiling very high coordination numbers and poor symmetry in the first coordination shell with respect to Si and Ge, related to different bonding properties. We simulated optical functions, quantitatively replicating the aforementioned reflectivity trend, and we highlighted a direct relationship between atomic structure and optical properties, indicating that unusual optics arises from Si−Ge higher local coordination characterized by low symmetry. We forecast further implications for the overall class of these alloys. These findings expand our comprehension of liquefied semiconductors and are essential for implementing controlled laser melting procedures to highly dope these materials for advanced transistors, superconductors, sensors, and plasmonic devices.

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Section: Introductionmentioning

confidence: 99%

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Ricciarelli,

Deretzis,

Calogero

et al. 2024

J. Phys. Chem. C

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“…Moreover, the non-equilibrium segregation during the fast solidification enhances dopant incorporation in the lattice. Thanks to these particular characteristics, laser annealing is nowa-days widely used as a post-fabrication annealing technique in microelectronics [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Ricciarelli¹,

Mannino²,

Deretzis³

et al. 2023

Preprint

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Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes and phases are involved. Within this context, reliable simulations of laser melting are required for optimizing the process parameters while reducing the number of experimental tests. This gives rise to a virtual Design of Experiments (DoE). Si1−xGex alloys are nowadays used for their compatibility with silicon devices enabling to engineer properties such as strain, carrier mobilities and bandgap. In this work, the laser melting process of relaxed and strained Si1−xGex is simulated with a finite element method / phase field approach. Particularly, we calibrated the dielectric functions of the alloy for its crystal and liquid phase using experimental data. We highlighted the importance of reproducing the exact reflectivity of the material in its different aggregation states, to correctly mimic the process.

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“…In this case, it is possible to use inhomogeneity of heterostructure and necessary optimization of doping of electronic materials [12,13] and development of epitaxial technology to improve these materials (including analysis of mismatch induced stress) [14][15][16]. An alternative approach to increase the dimensions of integrated circuits are using of laser and microwave types of annealing [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

"On Optimization of Manufacturing of Field-effect Transistors in the Framework of a Switch to Increase their Integration rate-On Influence Mismatch-induced Stress "

Pankratov

2023

IJASE

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Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing

Cited by 21 publications

References 6 publications

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

"On Optimization of Manufacturing of Field-effect Transistors in the Framework of a Switch to Increase their Integration rate-On Influence Mismatch-induced Stress "

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