Formation of Ultrahigh Density Quantum Dots Epitaxially Grown on Si Substrates Using Ultrathin SiO2 Film Technique

Nakamura, Yoshiaki

doi:10.5772/35995

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2015

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“…Formation mechanism was reported everywhere as follows. 26,27,38) At the first stage of Si or Ge deposition on the ultrathin SiO 2 films, deposited atoms diffuse on the surfaces until they react with the ultrathin SiO 2 films through the following reactions:…”

Section: Experimental Methodsmentioning

confidence: 99%

Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application

Nakamura

2015

Jpn. J. Appl. Phys.

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We developed the epitaxial growth technique of various kinds of nanodots (NDs) on Si substrates using ultrathin SiO 2 film. Fe-based NDs were epitaxially grown on Si substrates without intermixing with Si atoms in Si substrates despite the easy reaction of Si and Fe, resulting in atomically sharp interfaces between NDs and substrates. The status control of the nuclei was important at the nucleation stage in terms of control of ND crystal structure. The proper nuclei also suppressed the undesirable reactions such as intermixing of Fe and Si in Si substrates. The epitaxial NDs formed by our technique can supply the prospect for the application to some devices.

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Section: Experimental Methodsmentioning

confidence: 99%

Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application

Nakamura

2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Formation of Ultrahigh Density Quantum Dots Epitaxially Grown on Si Substrates Using Ultrathin SiO2 Film Technique

Cited by 1 publication

References 35 publications

Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application

Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application

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