2008
DOI: 10.1143/jjap.47.4461
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Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations

Abstract: We report a comparative study of the quantal and classical treatments of single-electron charge transfer from the L and K shells of Li(ls22s) in collisions with He2+ ions at intermediate energies. Quantal calculations have been performed using coupledstate atomic orbital expansions with up to 43 pseudostates in the basis, within the impact parameter formalism, for impact energies of 8 to 2000 keV lab. Classical trajectory Monte Carlo calculations for L-shell capture, using a model potential for the active elec… Show more

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“…5,26 High energy nitrogen radicals interact with Si atoms near the Si/ SiO 2 interface releasing oxygen atoms. These atoms then diffuse into the Si substrate causing reoxidation and hence an increase in the physical thickness of the dielectric.…”
Section: Discussionmentioning
confidence: 99%
“…5,26 High energy nitrogen radicals interact with Si atoms near the Si/ SiO 2 interface releasing oxygen atoms. These atoms then diffuse into the Si substrate causing reoxidation and hence an increase in the physical thickness of the dielectric.…”
Section: Discussionmentioning
confidence: 99%