Formation of various epitaxial nanodots in Si films for thermoelectric materials

Abstract

Abstract. Nanostructures are expected to enhance thermoelectric properties of Si-based materials. For enhancement, the simultaneous achievement of low  and high  is required. In our previous study, we have demonstrated drastic reduction of  in Si by introducing epitaxial connected Si NDs resulting in the sm allest  in Si. We have also reported that Si films containing Ge NDs exhibited the bulk -like  and the drastic  reduction compared with that of bulk Si. However, S was not controlled in this nanostructure. In general, introduction of interfaces or high S materials can increase S of the total film. In addition to control of  and , S can be controlled by tuning the material and size of NDs. In this work, we developed the formation method of the various material and size of introduced NDs.