Formation of ZnO memristor structures by scratching probe nanolithography

Tominov, R. V.; Smirnov, V. A.; Avilov, V. I.; Fedotov, A. A.; Климин, В. С.; Chernenko, N. E.

doi:10.1088/1757-899x/443/1/012036

Cited by 10 publications

(3 citation statements)

References 14 publications

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“…Among the latter are binary oxides such as ZnO, HfO 2 , ZrO 2 , NiO, TiO 2 , WO 3 , TaO x , and Gd 2 O 3 , which is of particular interest due to its compatibility with CMOS technology, multi-bit switching, and simple chemistry [ 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 ]. ZnO-based devices are used to simulate biological neurons and synaptic functions [ 49 , 50 ]. One of the main problems in the manufacture of ReRAM is obtaining controlled characteristics of switching behavior and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

et al. 2022

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This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition. It was demonstrated that the nanocrystalline ZnO film with TiN, Pt, ZnO:In, and ZnO:Pd bottom electrodes exhibits a nonlinear bipolar effect of forming-free resistive switching. The sample with Pt showed the highest resistance values RHRS and RLRS and the highest value of Uset = 2.7 ± 0.4 V. The samples with the ZnO:In and ZnO:Pd bottom electrode showed the lowest Uset and Ures values. An increase in the number of laser pulses from 1000 to 5000 was shown to lead to an increase in the thickness of the nanocrystalline ZnO film from 7.2 ± 2.5 nm to 53.6 ± 18.3 nm. The dependence of electrophysical parameters (electron concentration, electron mobility, and resistivity) on the thickness of the forming-free nanocrystalline ZnO film for the TiN/ZnO/W structure was investigated. The endurance test and homogeneity test for TiN/ZnO/W structures were performed. The structure Al2O3/TiN/ZnO/W with a nanocrystalline ZnO thickness 41.2 ± 9.7 nm was shown to be preferable for the manufacture of ReRAM and memristive neuromorphic systems due to the highest value of RHRS/RLRS = 2307.8 ± 166.4 and low values of Uset = 1.9 ± 0.2 V and Ures = −1.3 ± 0.5 V. It was demonstrated that the use of the TiN top electrode in the Al2O3/TiN/ZnO memristor structure allowed for the reduction in Uset and Ures and the increase in the RHRS/RLRS ratio. The results obtained can be used in the manufacturing of resistive-switching nanoscale devices for neuromorphic computing based on the forming-free nanocrystalline ZnO oxide films.

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Section: Introductionmentioning

confidence: 99%

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

et al. 2022

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“…Nanoscale conduction channel consists of many oxygen vacancies, the generation or recombination of each of which leads to the emergence of a new resistive state, which makes it possible to create a neuromophilic system with a potentially high degree of multibitness. The effect of resistive switching is demonstrated by many metal oxides (TiO x , ZnO, NiO, HfO x , VO x ), of which vanadium oxide is especially distinguished to create neuromorphic systems, primarily due to low switching values and high values of the HRS/LRS ratio [ 39 , 40 , 41 , 42 ].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

et al. 2020

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We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.

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“…A variety of nanoimprint lithography is scratching probe nanolithography, which allows using the tip of an atomic force microscope probe to form profiled nanostructures in polymer films [21]. The simplicity of the method implementation allows using it in the development and study of promising design and technological solutions for prototyping ReRAM elements [22].…”

Section: Introductionmentioning

confidence: 99%

Application of Probe Nanotechnologies for Memristor Structures Formation and Characterization

Smirnov¹,

Il’ina²,

Avilov³

et al. 2019

Memristors - Circuits and Applications of Memristor Devices [Working Title]

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This chapter presents the results of experimental studies of the formation and investigation of the memristors by probe nanotechnologies. This chapter also perspectives and possibilities of application of local anodic oxidation and scratching probe nanolithography for the manufacture of memristors based on titanium oxide structures, nanocrystalline ZnO thin film, and vertically aligned carbon nanotubes. Memristive properties of vertically aligned carbon nanotubes, titanium oxide, and ZnO nanostructures were investigated by scanning probe microscopy methods. It is shown that nanocrystalline ZnO films manifest a stable memristor effect slightly dependent on its morphology. Titanium oxide nanoscale structures of different thicknesses obtained by local anodic oxidation demonstrate a memristive effect without the need to perform any additional electroforming operations. This experimentally confirmed the memristive switching of a two-electrode structure based on a vertically aligned carbon nanotube. These results can be used in the development of designs and technological processes of resistive random access memory (ReRAM) units based on the memristor devices.

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Formation of ZnO memristor structures by scratching probe nanolithography

Cited by 10 publications

References 14 publications

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

Application of Probe Nanotechnologies for Memristor Structures Formation and Characterization

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