1990
DOI: 10.1007/bf01387821
|View full text |Cite
|
Sign up to set email alerts
|

Formation region of amorphous thin CoZr and CuZr films prepared by cocondensation on hot substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
7
0
1

Year Published

1991
1991
2015
2015

Publication Types

Select...
9
1

Relationship

1
9

Authors

Journals

citations
Cited by 26 publications
(8 citation statements)
references
References 37 publications
0
7
0
1
Order By: Relevance
“…The lowered T x in amorphous CuZr thin films can be the result of surface contamination and annealing at temperatures close to T x . 48 Considering our efforts to avoid contamination during sample preparation and handling, the observed low T x is unlikely be caused by contamination. As we discussed earlier for the thicker cluster-assembled film it is indeed possible that the samples achieved higher transient temperatures during their production.…”
Section: Materials Expressmentioning
confidence: 97%
“…The lowered T x in amorphous CuZr thin films can be the result of surface contamination and annealing at temperatures close to T x . 48 Considering our efforts to avoid contamination during sample preparation and handling, the observed low T x is unlikely be caused by contamination. As we discussed earlier for the thicker cluster-assembled film it is indeed possible that the samples achieved higher transient temperatures during their production.…”
Section: Materials Expressmentioning
confidence: 97%
“…and micro-technological (deposited by sputtering or evaporation, solidstate reactions, ion beam mixing, layer-by-layer deposition). For the micro-technological techniques, co-condensation by means of thermal evaporation in high vacuum [6][7][8] or ion-magnetron sputtering [9] is widely used for synthesis of thin films of metal amorphous alloys.…”
Section: Introductionmentioning
confidence: 99%
“…Earlier experiments 15 and recent scanning tunneling microscope studies 16 compared with molecular dynamic simulations 17 proved the amorphous growth of this metallic system on silicon substrates.…”
Section: Methodsmentioning
confidence: 81%