Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

Abstract

The reproducible forming-free resistive switching (RS) behavior in rare-earth-oxide Gd2O3 polycrystalline thin film was demonstrated. The characteristic of this forming-free RS was similar to that of other forming-necessary binary RS materials except that its initial resistance starts from not the high resistance state (HRS) but the low resistance state (LRS). An ultrahigh resistance switching ratio from HRS to LRS of about six to seven orders of magnitude was achieved at a bias voltage of 0.6 V. Mechanism analysis indicated that the existence of metallic Gd in the Gd2O3 films plays an important role in the forming-free RS performance. Our work provides a novel material with interesting RS behavior, which is beneficial to deepen our understanding of the origin of RS phenomenon.

Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOxFilm in IrOx/GdOx/W Structure for Biomedical Applications

“…Therefore, the dielectric permittivity of the GdO x layers is approximately 14, which is similar to the values. 10,13,44,46 The pH sensitivity values measured at flatband region with a 60% position of accumulation capacitance are found to be 40, 45.1, and 53.2 mV/pH for the bare SiO 2 , as-deposited, and annealed GdO x sensors with pH value ranging from 6 to10, while the linearity values are found to be 99.29%, 99.2%, and 98.98%, respectively. The sensitivity of the bare SiO 2 membrane is slightly higher than the reported values of 35 mV/pH 47 and 36 mV/pH from pH2 to 10 48 owing to the higher sensitivity at basic region (pH > 7).…”

RRAM characteristics using a new Cr/GdOx/TiN structure

“…Besides binary oxides, some rare-earth materials such as yttrium-oxide (Yb 2 O 3 ) [21] and gadolinium-oxide (Gd 2 O 3 ) [22–27] also attract to the researchers for high-performance RRAM application. However, the Gd 2 O 3 is one of the promising materials because of its higher energy bandgap 5.4 eV [28], higher dielectric constant 14 to 20 [28, 29], and good chemical and thermal stability [24]. Most importantly, this can form Gd:Gd 2 O 3 film [22] as well as polycrystalline [22], which will help to have controllable oxygen vacancy filament formation/rupture under external bias.…”

“…Aratani et al [23] have reported the conductive bridging RRAM using Cu or a Ag/CuTe/Gd 2 O 3 /W structure with an operating current of 100 μA. Cao et al [24] have reported unipolar resistive switching using a Pt/Gd 2 O 3 /Pt structure at high RESET current of approximately 35 mA. Zhou et al [25] have reported bipolar resistive switching phenomena using a Pt/GdO x /TaN x structure at high current compliance (CC) of 1 mA, and high forming voltage is required to switch the device initially.…”

On the method of the fabrication of active channels of organic memristive devices: Langmuir-Blodgett vs layer-by-layer

“…The most of the currently reported devices are based on metal oxide layers [4], [5]. However, there are several exceptions, describing elements, where the active zone is formed from other materials [6], [7].…”