Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition

Kim, Minjae; Kim, Dong-eun; Wang, Yue; Lee, Donghyun; Lim, Dong-Hyeok; Choi, Haryeong; Kymissis, Ioannis; Yang, J. Joshua; Suh, Joonki; Lee, Hong-Sub; Park, Hyung-Ho

doi:10.1016/j.apmt.2024.102204

Cited by 5 publications

References 70 publications

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Effect of neural firing pattern on NbOx/Al2O3 memristor-based reservoir computing system

Ju,

Ji,

Lee

et al. 2024

APL Materials

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The implementation of reservoir computing using resistive random-access memory as a physical reservoir has attracted attention due to its low training cost and high energy efficiency during parallel data processing. In this work, a NbOx/Al2O3-based memristor device was fabricated through a sputter and atomic layer deposition process to realize reservoir computing. The proposed device exhibits favorable resistive switching properties (>103 cycle endurance) and demonstrates short-term memory characteristics with current decay. Utilizing the controllability of the resistance state and its variability during cycle repetition, electrical pulses are applied to investigate the synapse-emulating properties of the device. The results showcase the functions of potentiation and depression, the coexistence of short-term and long-term plasticity, excitatory post-synaptic current, and spike-rate dependent plasticity. Building upon the functionalities of an artificial synapse, pulse spikes are categorized into three distinct neural firing patterns (normal, adapt, and boost) to implement 4-bit reservoir computing, enabling a significant distinction between “0” and “1.”

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Effect of neural firing pattern on NbOx/Al2O3 memristor-based reservoir computing system

Ju,

Ji,

Lee

et al. 2024

APL Materials

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A multilevel resistive switching memristor based on flexible organic–inorganic hybrid film with recognition function

Liu,

Ma,

Sun

et al. 2024

J. Phys. D: Appl. Phys.

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Brain-inspired neuromorphic computing systems fueled the emergence of memristor-based artificial synapses, however, conventional silicon-based devices restricted their usage in the wearable field because of their difficulty in bending. To tackle the above challenge, a vertically structured flexible memristor with aluminum-based hydroquinone organic-inorganic hybrid film and Al2O3 as the functional layer, ITO and Pt as the bottom and top electrodes, and PET as the substrate has been developed utilizing molecular/atomic layer deposition to achieve a tradeoff between the resistive transition properties and the flexibility of memristors. The obtained devices combine stable resistive switching behavior and flexibility, showing high switching ratio of 103, better retention (up to 105 s) and endurance properties (up to 104 cycles), and robustness at radius of curvature of 4.5 mm after 104 bending cycles. Furthermore, the presence of multilevel resistive states in these devices ensures that the memristor can emulate synaptic properties such as paired-pulse facilitation, transition from short-term plasticity to long-term plasticity, long-term potentiation and depression, and spike-time-dependent plasticity. The resistive switching mechanism and the role of the bending state on the electrical performance of the device are explored. The fully connected artificial neural network based on the memristor can achieve a recognition accuracy of 90.2% for handwritten digits after training and learning. Flexible memristor will bring feasible advances to the integration of neuromorphic computing and wearable functionality.

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Unraveling the Dynamics of HfO₂-Based NW-CTT as an Artificial Synapse

Goel,

Ansari,

El-Atab

et al. 2024

IEEE Trans. Electron Devices

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Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition

Cited by 5 publications

References 70 publications

Effect of neural firing pattern on NbOx/Al2O3 memristor-based reservoir computing system

Effect of neural firing pattern on NbOx/Al2O3 memristor-based reservoir computing system

A multilevel resistive switching memristor based on flexible organic–inorganic hybrid film with recognition function

Unraveling the Dynamics of HfO₂-Based NW-CTT as an Artificial Synapse

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Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition

Cited by 5 publications

References 70 publications

Effect of neural firing pattern on NbOx/Al2O3 memristor-based reservoir computing system

Effect of neural firing pattern on NbOx/Al2O3 memristor-based reservoir computing system

A multilevel resistive switching memristor based on flexible organic–inorganic hybrid film with recognition function

Unraveling the Dynamics of HfO2-Based NW-CTT as an Artificial Synapse

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Unraveling the Dynamics of HfO₂-Based NW-CTT as an Artificial Synapse