Forming of high-voltage nanosecond and subnanosecond pulses using standard power rectifying diodes

Belkin, V. S.; Shulzchenko, G. I.

doi:10.1063/1.1145241

Cited by 22 publications

(8 citation statements)

References 1 publication

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“…semiconductor pin diode turn-off, where a specific energy reservoir discharges through the pin diode, until the diode reaches the turn-off and residual energy is transferred abruptly to the load [6] [7]; logic gates switching, where a pair of fast logic gates or flip flops is switched sequentially in order to form the short trapezoidal pulse; the correct choice for adequate switching times and voltage levels is an issue; this approach is new and was not found in the literature.…”

Section: Pulse Generationmentioning

confidence: 99%

Design of a pulse generator for wideband applications

Mariscotti

Vaccaro

2007

2007 IEEE Instrumentation &Amp; Measurement Technology Conference IMTC 2007

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The final application is an E-field reference generator with a discrete spectrum extended above 3 GHz. This work presents a series of circuit solutions for the generation of pulses with rise time in the range of 50-250 ps and significant amplitude (above 0.5 V). The pulse generator is designed for a 50 ohm load, which will be replaced by the antenna set (short dipole or horn antenna) for Efield generation; it is driven by a high slew rate square wave local oscillator or possibly by an external generator.

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Section: Pulse Generationmentioning

confidence: 99%

Design of a pulse generator for wideband applications

Mariscotti

Vaccaro

2007

2007 IEEE Instrumentation &Amp; Measurement Technology Conference IMTC 2007

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“…Высоковольтные диоды с резким восстановлением блокирующей способности (ДРВ) давно используются в качестве прерывателей тока в мощных генераторах наносекундных импульсов с промежуточным индуктивным накопителем энергии [1][2][3]. В общем случае ДРВ представляют собой полупроводниковые p + −p−n−n +структуры, которые, начиная с пионерской работы [4], изготавливались по обычной диффузионной технологии мощных кремниевых выпрямительных диодов [4][5][6][7][8][9][10][11]. В статье [8] было показано, что наличие p-слоя, сформированного путем диффузии Al на большую (∼ 100 мкм) глубину существенно уменьшает время обрыва тока, а авторы недавней статьи [12] даже назвали такой p-слой " принципиальной особенностью конструкции этих диодов".…”

Section: Introductionunclassified

Высоковольтные Диффузионные Диоды С Резким Восстановлением. I. Численное Моделирование

Кюрегян¹

2019

Физика И Техника Полупроводников

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The operation of diffusion step recovery diodes (dSRD) as current interrupters in high-power nanosecond pulse generators was studied in detail by the methods of numerical computer simulation for the first time. One of the necessary conditions that minimize the loss in dSRD was specified. Dependences of pre-pulse voltage, front duration, amplitude and duration of pulse formed on the active load, and the energy of switching losses in the dSRD on the device area and the break current density are obtained. It is shown that simulation results can be described by simple analytical formulas obtained in the second part of the work, with an accuracy of 10-20% if the pulse amplitude does not exceed the avalanche breakdown voltage of the dSRD. The generalized figure of merit which can be used for optimization of dSRD parameters, a mode of its operation and comparison of efficiency of current interrupters of various types was offered.

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“…These circuits use a preliminary switch that serves as a compression stage for driving the DSRD. In [13], a 3 kV, 5 ns preliminary compression stage consisting of a transistor and a nonlinear transformer was used to drive the DSRD. The reported efficiency for this preliminary stage was between 40% and 50%.…”

Section: Introductionmentioning

confidence: 99%

Efficiency Study of a 2.2 kV, 1 ns, 1 MHz Pulsed Power Generator Based on a Drift-Step-Recovery Diode

Merensky

Кардо-Сысоев²,

Shmilovitz

et al. 2013

IEEE Trans. Plasma Sci.

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Drift-step-recovery diodes (DSRDs) are used in pulsed-power generators to produce nanosecond-scale pulses with a rise rate of the order of 1 kV/ns. A 2.2 kV, 1 ns pulsed power circuit is presented. The circuit features a single prime switch that utilizes a low-voltage dc power supply to pump and pulse the DSRD in the forward and reverse directions. An additional lowcurrent dc power supply is used to provide a voltage bias in order to balance the DSRD forward with respect to its reverse charge. The DSRD was connected in parallel to the load. In order to study the circuit's efficiency, it was operated over a wide range of operating parameters, including the main and bias source voltages, and the trigger duration of the prime switch. A peak voltage of 2.2 kV with a rise time of less than 1 ns and a rise rate of 3 kV/ns was obtained, where the efficiency was 24%. A higher efficiency of 52% was obtained when the circuit was optimized to an output peak voltage of 1.15 kV. The circuit was operated in single-shot mode as well as in bursts of up to 100 pulses at a repetition rate of 1 MHz. The experimental results are supported by a PSPICE simulation of the circuit. An analysis of the circuit input and output energies with respect to the MOSFET and DSRD losses is provided.

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Forming of high-voltage nanosecond and subnanosecond pulses using standard power rectifying diodes

Cited by 22 publications

References 1 publication

Design of a pulse generator for wideband applications

Design of a pulse generator for wideband applications

Высоковольтные Диффузионные Диоды С Резким Восстановлением. I. Численное Моделирование

Efficiency Study of a 2.2 kV, 1 ns, 1 MHz Pulsed Power Generator Based on a Drift-Step-Recovery Diode

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