Forming of the domain structure in lead germanate during phase transition

Shur, V. Ya.; Rumyantsev, E. L.; Subbotin, A. L.

doi:10.1080/00150199308008301

Cited by 17 publications

(11 citation statements)

References 3 publications

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“…On the other hand, it has been reported that the inverse scaling as a function of the cooling rate occurred at the transition between two fluctuation regimes (Ginzburg and mean field) in hexagonal manganites. [ 19 ] Whether this transition regime or charged defects, a pyroelectric field, [ 20 ] or unusual domain wall properties are responsible for the unexpected inverse cooling rate dependence of the domain size remains to be clarified. What is important is that the observed atypical cooling‐rate‐dependent behavior is part of the overall non‐trivial domain wall dynamics in PGO.…”

Section: Resultsmentioning

confidence: 99%

Observation of Unconventional Dynamics of Domain Walls in Uniaxial Ferroelectric Lead Germanate

Bak

Holstad

Tan

et al. 2020

Adv Funct Materials

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Application of scanning probe microscopy techniques such as piezoresponse force microscopy (PFM) opens the possibility to re-visit the ferroelectrics previously studied by the macroscopic electrical testing methods and establish a link between their local nanoscale characteristics and integral response. The nanoscale PFM studies and phase field modeling of the static and dynamic behavior of the domain structure in the well-known ferroelectric material lead germanate, Pb 5 Ge 3 O 11 , are reported. Several unusual phenomena are revealed: 1) domain formation during the paraelectric-to-ferroelectric phase transition, which exhibits an atypical cooling rate dependence; 2) unexpected electrically induced formation of the oblate domains due to the preferential domain walls motion in the directions perpendicular to the polar axis, contrary to the typical domain growth behavior observed so far; 3) absence of the bound charges at the 180° head-to-head (H-H) and tail-totail (T-T) domain walls, which typically exhibit a significant charge density in other ferroelectrics due to the polarization discontinuity. This strikingly different behavior is rationalized by the phase field modeling of the dynamics of uncharged H-H and T-T domain walls. The results provide a new insight into the emergent physics of the ferroelectric domain boundaries, revealing unusual properties not exhibited by conventional Isingtype walls.

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Section: Resultsmentioning

confidence: 99%

Observation of Unconventional Dynamics of Domain Walls in Uniaxial Ferroelectric Lead Germanate

Bak

Holstad

Tan

et al. 2020

Adv Funct Materials

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“…The first one is relevant to experiments with BaTiO 3 and PbTiO 3 , 21 LiNbO 3 , 24,[63][64][65][66] and Pb 5 Ge 3 O 11 . 23,67 As for the transmission configuration, CDWs in (110) c and (111) c cuts of BaTiO 3 crystals (hereafter the subscript c indicates the pseudocubic reference frame) were observed both in polarized and non-polarized ( Fig. 2d) light.…”

Section: Cdw Observationsmentioning

confidence: 96%

“…In view of the high energy of their formation, CDWs were only occasionally mentioned in the past. [20][21][22][23][24] In the 2000's, research activity focused on oxide interfaces 4,25 revived the interest in electronically compensated CDWs as potential hardware of reconfigurable conducting paths. To date, CDWs are documented in many ferroelectrics, using different experimental techniques.…”

Section: Cdw Observationsmentioning

confidence: 99%

Physics and applications of charged domain walls

Bednyakov

Sturman

Sluka³

et al. 2018

npj Comput Mater

164

158

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The charged domain wall is an ultrathin (typically nanosized) interface between two domains; it carries bound charge owing to a change of normal component of spontaneous polarization on crossing the wall. In contrast to hetero-interfaces between different materials, charged domain walls (CDWs) can be created, displaced, erased, and recreated again in the bulk of a material. Screening of the bound charge with free carriers is often necessary for stability of CDWs, which can result in giant two-dimensional conductivity along the wall. Usually in nominally insulating ferroelectrics, the concentration of free carriers at the walls can approach metallic values. Thus, CDWs can be viewed as ultrathin reconfigurable strongly conductive sheets embedded into the bulk of an insulating material. This feature is highly attractive for future nanoelectronics. The last decade was marked by a surge of research interest in CDWs. It resulted in numerous breakthroughs in controllable and reproducible fabrication of CDWs in different materials, in investigation of CDW properties and charge compensation mechanisms, in discovery of light-induced effects, and, finally, in detection of giant two-dimensional conductivity. The present review is aiming at a concise presentation of the main physical ideas behind CDWs and a brief overview of the most important theoretical and experimental findings in the field.

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“…Of a limited experimental interest in the past 7 8 9 10 , the occurrence of CDWs have been recently documented experimentally in classical proper 5 11 12 13 14 , improper 15 and hybrid improper ferroelectrics 16 , and in organic ferroelectrics 17 . The interest in CDWs is primarily motivated by the phenomenon, which was theoretically predicted some 40 years ago 18 .…”

mentioning

confidence: 99%

Formation of charged ferroelectric domain walls with controlled periodicity

Bednyakov

Sluka

Tagantsev

et al. 2015

Sci Rep

100

123

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Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic circuitry. In addition, theory predicts that charged domain walls may influence the electromechanical response of ferroelectrics, with strong enhancement upon increased charged domain wall density. The existence of charged domain walls in proper ferroelectrics is disfavoured by their high formation energy and methods of their preparation in predefined patterns are unknown. Here we develop the theoretical background for the formation of charged domain walls in proper ferroelectrics using energy considerations and outline favourable conditions for their engineering. We experimentally demonstrate, in BaTiO3 single crystals the controlled build-up of high density charged domain wall patterns, down to a spacing of 7 μm with a predominant mixed electronic and ionic screening scenario, hinting to a possible exploitation of charged domain walls in agile electronics and sensing devices.

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Forming of the domain structure in lead germanate during phase transition

Cited by 17 publications

References 3 publications

Observation of Unconventional Dynamics of Domain Walls in Uniaxial Ferroelectric Lead Germanate

Observation of Unconventional Dynamics of Domain Walls in Uniaxial Ferroelectric Lead Germanate

Physics and applications of charged domain walls

Formation of charged ferroelectric domain walls with controlled periodicity

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