Formulation, Characterization and LPG-Sensing Properties of CuO-Doped ZnO Thick Film Resistor

Deore, M. K.; Gaikwad, V. B.; Chaudhari, R. M.; PATIL, N. U.; Hire, P. D.; Deshmukh, S. B.; Patil, Ganesh C.; Wagh, V. G.; Jain, G. H.

doi:10.1007/978-3-642-32180-1_16

Cited by 3 publications

(3 citation statements)

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“…Its high volatility explains why it reacts quickly and recovers quickly from its initial chemical state. The small amounts of surface reaction products and their high volatility account for the rapid response to LPG and its return to its original chemical state [29,30]. Fig.…”

Section: Response and Recovery Timementioning

confidence: 99%

“…The surface reaction of composite metal oxide semiconductors is used in the sensing part of the sensors. In air, molecular oxygen is chemisorbed as O2 -, O -, or O2 -, depending on the operating temperature [29,30]. Electron transfer reactions, also known as redox reactions, are the major part of the sensing response.…”

Section: Lpg Gas Sensing Mechanism For Cuo-zno Heterojunction Thin Filmmentioning

confidence: 99%

“…The energy released during the decomposition of LPG molecules will be enough to cause trapped electrons to hop into the conduction band of activated ZnO, increasing the film's conductivity. The change in conductivity of the fabricated thin film was recorded as a response to the LPG gas in the form of a change in resistance [30,31].…”

Section: Lpg Gas Sensing Mechanism For Cuo-zno Heterojunction Thin Filmmentioning

confidence: 99%

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Study of p-n Heterojunction Thin Films for Reducing Gas Sensing Application Fabricated by Thermal Evaporation Technique

Lad

Kokode

Tupe³

2022

AMR

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Gas sensors have been widely implemented to solve concerns of air pollution, monitor human health, and crop yields. Because of its high sensitivity, quick response time, and short recovery time, metal oxide semiconductor (MOS) gas sensors have become a significant topic of research in the field of gas sensing. In the recent decade, many researchers are work on the different types of pure and doped MOS for improve gas sensor response. The present research work deals with the fabrication of p-n heterojunction thin films on alumina substrate by using thermal evaporation technique for reducing gas sensing application. In the current research work, ZnO is used as a functional material and MgO as a dopant. The structural, electrical, and gas sensing properties of fabricated p-n (CuO-ZnO) heterojunction thin films were studied. The resistivity of p-n heterojunction thin films was found to be 23.461Ω/m. The found to be negative to p-n heterojunction thin films. The morphological, elemental and structural characterization of fabricated CuO-ZnO heterojunction thin films were analyzed by using , EDAX and XRD standard tools respectively. By using Scherer’s formula the crystallite size of CuO-ZnO heterojunction thin films was found as 36.83 nm. The fabricated CuO-ZnO heterojunction thin films were exposed to reducing gases such as Liquefied petroleum (LPG), Ammonia (NH3), Ethanol (C2H5OH), and Dichlorofluoromethane (R12) to determine gas response and selectivity. Fabricated CuO-ZnO heterojunction thin films shows maximum response to LPG gas as compare to other gases. The maximum sensitivity has to be found 89.23% to LPG gas of concentration 300 ppm. Fabricated MgO-ZnO thin films also show fast response and recovery time in seconds.

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Section: Response and Recovery Timementioning

confidence: 99%

Section: Lpg Gas Sensing Mechanism For Cuo-zno Heterojunction Thin Filmmentioning

confidence: 99%

Section: Lpg Gas Sensing Mechanism For Cuo-zno Heterojunction Thin Filmmentioning

confidence: 99%

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