Forward-current electroluminescence from GaN/ZnO double heterostructure diode

Alivov, Ya. I.; Özgür, Ü.; Dogˇan, S.; Liu, C.; Youngjoo, Moon; Gu, Xing; Avrutin, Vitaliy; Fu, Y.; Morkoç̌, H.

doi:10.1016/j.sse.2005.07.021

Cited by 26 publications

(14 citation statements)

References 13 publications

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“…Whereas the redshifted violet emission band centered at about 430 nm was ascribed to the transitions from the conduction band or shallow donors to deep Mg acceptor levels in the p-GaN thin film substrate [372,377,380]. The blue emission at around 460 nm was assigned to the radiative interfacial recombination of the electrons from n-ZnO and holes from p-GaN [380][381][382]. The interface states generally act as nonradiative centers that annihilate free electrons and holes.…”

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…Whereas the red-shifted violet emission band centered at about 430 nm is ascribed to the transitions from the conduction band or shallow donors to deep Mg acceptor levels in the p-GaN thin film substrate [36,42,43]. The blue emission around 460 nm comes from the radiative interfacial recombination of the electrons from n-ZnO and holes from p-GaN [42,44,45].…”

Section: Electroluminescence Spectra and Characteristics Of The Emissmentioning

confidence: 99%

Oxide nanowire arrays for light-emitting diodes and piezoelectric energy harvesters

Wang

2011

Pure and Applied Chemistry

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As an outstanding member in the oxide nanowire family, ZnO nanowire is widely studied for its optical, semiconductive, and piezoelectric properties. PbZr x Ti 1-x O 3 (PZT), usually in the form of polycrystalline thin films, is known for its high piezoelectric coefficient and is an ideal material as actuator. In this review, we first briefly introduce the rational growth of ZnO and PZT nanowire arrays by seedless wet chemical methods. Utilizing the ordered ZnO nanowires grown on p-type substrates, we next present an array of single ZnO nanowire-based blue/near-UV light-emitting diodes (LEDs), including their fabrication process, electroluminescence (EL) spectra, and external quantum efficiency. Finally, we discuss the piezoelectric ZnO and PZT nanowire-enabled three-dimensionally integrated direct-and alternating-current nanogenerators, and their primary roles in selfpowered nanosystems and for powering personal microelectronics.Oxide nanowire arrays for energy sciences 2173virtue of entropy increase, resulting in higher decomposition rate of HMTA. Therefore, at the initial stage of reaction, HMTA has already decomposed to a relatively large degree and produced sufficient OHfor ZnO growth, so the base of ZnO nanorods is thicker than at lower temperatures. As the supply of Zn 2+ gradually becomes exhausted, the diameter of the nanowire would gradually decrease, forming a pyramidal shape. The ZnO nanowires synthesized via this method are of low aspect ratios, typically 10 to 15 [12], which greatly limits their applications where flexible or high surface-to-volume ratio nanowires are needed. To increase the aspect ratio, capping agents such as ethylenediamine [16] and polyethylenimine [2] can be added. However, these capping agents might also introduce certain impurities into the ZnO nanowires, undermining their properties and performance. Without capping agents, improvement of the aspect ratio proved to be challenging, because reaction parameters such as precursor concentration, growth time, and growth temperature worked together in a convoluted manner toward the final growth product. Most reported studies employed inefficient cook-and-look methods, and lacked theoretical guidance in experimental design. Fig. 2 SEM images of ZnO nanowire arrays with an aspect ratio of (a) 15.1, (b) 20.1, (c) 20.9, and (d) 22.3, respectively, and (e) their corresponding reflectance spectra [15]. Oxide nanowire arrays for energy sciences 2177 Fig. 4 (a) Top view and (b) 60º tilt view of the ZnO nanowire arrays on a GaN substrate. Inset in (a) is enlarged image showing the in-plane alignment of the nanowires. (c) Top view and (d) 60º tilt view of a 200 × 200 μm patterned nanowire array with 1 μm in pitch [20]. Fabrication of the heterostructural LEDWhile the pursuit of stable and reproducible p-ZnO is still ongoing [38], heterojunctions of n-ZnO and p-GaN were employed as an alternative approach considering the similar crystallographic and electronic properties of ZnO and GaN. The design of the LED is shown in Fig. 7a. Ordered ZnO nan...

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“…Jang et al [6] indicated that the emission for n-type ZnO/p-type ZnO LEDs is mainly from the region close to p layer. According the reported results [3][4][5][6], we find that the brightness of ZnO-based LEDs is deeply related to the optical property of ZnO. On the other hand, Park et al [8] reported the sheet resistance, surface work function, and structure characteristics of Al-doped ZnO films deposited by means of an atomic layer deposition method.…”

Section: Introductionmentioning

confidence: 96%

“…In addition, Al-doped ZnO film has high transmittance in the visible region, low resistivity, and the optical band gap can be controlled by the Al doping level. Several recent papers have reported ZnO-based light-emitting diodes (LEDs) [3][4][5][6][7]. Yuen et al [3] suggested that the ultraviolet electroluminescence from the n-type Al-doped ZnO/p-type SiC heterojunction is originated from the exciton-exciton scattering inside the n-type Al-doped ZnO film.…”

Section: Introductionmentioning

confidence: 99%

“…Yuen et al [3] suggested that the ultraviolet electroluminescence from the n-type Al-doped ZnO/p-type SiC heterojunction is originated from the exciton-exciton scattering inside the n-type Al-doped ZnO film. Alivov et al [4] suggested that the observed electroluminescence from n-type GaN/n-type ZnO/p-type GaN LEDs is most probably a superposition of emission originating from n-type ZnO, n-type GaN, and p-type GaN layers. Alivov et al [5] reported that the 389 nm emission for n-type ZnO/p-type AlGaN heterojunction LEDs is shown to originate from recombination within the ZnO.…”

Section: Introductionmentioning

confidence: 99%

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