Forward gated-diode method for extracting hot-carrier-stress-induced back interface traps in SOI/NMOSFETs

Abstract

The forward gated-diode R-G current method for extracting the hot-carrier-stressinduced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter.This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.