Foundry 0.13 μm CMOS modeling for MS/μwave SOC design at 10 GHz and beyond

Abstract

This paper reports on the first unitary set of geometry-scalable, wide-hand compact models for all the components o f a 0.13 p m RF CMOS technology and which are valid up to 50 GHz. Verification of the active and passive device models i s achieved at the device level as well as by comparing measurements and simulation results of the S parameter response and jitter generation o f high-speed circuits operating above 10 GHz from a single 1.2-V supply.

RFIC TaN/SrTiO$_3/$TaN MIM Capacitors With 35fF$/muhboxm^2$Capacitance Density

“…1 MHz. Such high capacitance density provides a 35 times area reduction than the 1 fF m value provided by foundry [3]. In addition, a near constant capacitance value with little voltage and frequency dependence is obtained for the STO MIM capacitor, which is important for RF IC under large voltage swing condition.…”

“…To achieve this goal, high dielectric constant material is required since the decreasing dielectric thickness will exponentially increase the undesired leakage current. Therefore, high-dielectric has been continuously evolving from SiON ( 4-7) [1]- [3], Al O 10 [4]- [6], and HfO 20 [7] or Ta O 24 [8], [9], according to International Technology Roadmap for Semiconductors (ITRS). For value larger than 25, ternary dielectric is needed and we have previously shown good RF characteristics of MIM capacitors using TaTiO 45 [10], [11].…”