Foundry Development of System-On-Chip InP-Based Photonic Integrated Circuits

Hoefler, Gloria E.; Zhou, Yuchun; Anagnosti, Maria; Bhardwaj, Ashish; Abolghasem, Payam; James, A.; Luna, Shawn; Debackere, Peter; Dentai, A.G.; Vallaitis, T.; Liu, Paul; Missey, M.; Corzine, S.; Evans, P.; Lal, V.; Ziari, M.; Welch, David; Kish, Fred; Suelzer, Joseph S.; Devgan, P.; Usechak, Nicholas G.

doi:10.1109/jstqe.2019.2906270

Cited by 30 publications

(18 citation statements)

References 35 publications

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“…While commercially available DFB lasers are predominantly obtained through photonic integration on InP substrates, the yield improvement and manufacturing defect reduction of III-V processing lags far behind the learning curve of Si electrical integrated circuits. [2] A key distinction between the commercial Si and III-V processes is the yield and scaling capability. Si is significantly better, owing to a larger and cheaper wafer, more precise wafer leveling and more advanced lithography tools available after a half century's development in microelectronics.…”

Section: Introductionmentioning

confidence: 99%

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Wan

Norman

Tong

et al. 2020

Laser & Photonics Reviews

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Distributed feedback (DFB) lasers represent a central focus for wavelength‐division‐multiplexing‐based transceivers in metropolitan networks. Here, the first 1.3 µm quantum dot (QD) DFB lasers grown on a complementary metal‐oxide‐semiconductor (CMOS)‐compatible (001) Si substrate are reported. Temperature‐stable, single‐longitudinal‐mode operation is achieved with a side‐mode suppression ratio of more than 50 dB and a threshold current density of 440 A cm−2. A single‐lane rate of 128 Gbit s−1 with a net spectral efficiency of 1.67 bits−1 Hz−1 is demonstrated, with an aggregate total transmission capacity of 640 Gbit s−1 using five channels in the O‐band. Apart from the QD active region growth, the overall fabrication is essentially identical to the commercial process for quantum well (QW) DFB lasers. This provides a process‐compatible path for QD technology into commercial applications previously filled by QW devices. In addition, the capability to grow laser epi across entire CMOS‐compatible (001) Si wafers adds extra benefits of reduced cost, improved heat dissipation, and manufacturing scalability. Through direct epitaxial integration of III–Vs and Si, one can envision a revolution of the photonics industry in the same way that CMOS design and processing revolutionize the microelectronics industry. This is discussed from a system perspective for on‐chip optical interconnects.

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Section: Introductionmentioning

confidence: 99%

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Wan

Norman

Tong

et al. 2020

Laser & Photonics Reviews

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“…Nowadays photonic integration mainly relies on the following three integration platforms, i.e., InPbased integration, silicon photonic integration (SOI) and silicon nitride/silicon dioxide-based integration (Si 3 N 4 /SiO 2 ) [139][140][141][142]. Each of these three integration material platforms has unique advantages, but also has some disadvantages.…”

Section: Optical Function Inp 3 Optoelectronic Chips: Research Status and Development Trendmentioning

confidence: 99%

Recent progress of integrated circuits and optoelectronic chips

Xiang

Han

Zhang

et al. 2021

Sci. China Inf. Sci.

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Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

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“…The order, or orders, of magnitude improvements in these three key metrics of the SCL are archived while maintaining its small size and the CMOS-fabrication compatibility. Taken together, they pave the way to a new generation of SCLs with intrinsic ultra-high-Q values as the main enablers of high-coherence photonic integrated circuits 11 .…”

Section: Introductionmentioning

confidence: 95%

Consequences of Quantum Noise Control for the Relaxation Resonance Frequency and Phase Noise in Heterogeneous Silicon/III-V Lasers

Kim

Harfouche

Wang

et al. 2021

Preprint

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We have recently introduced a new semiconductor laser design which is based on an extreme, 99%, reduction of the laser mode absorption losses. This was achieved by a laser mode design which confines the great majority of the modal energy (> 99%) in a low-loss Silicon guiding layer rather than in highly-doped, thus lossy, III-V p+ and n+ layers, which is the case with traditional III-V lasers. The resulting reduced electron-field interaction leads directly to a commensurate reduction of the spontaneous emission rate by the excited conduction band electrons into the laser mode and thus to a reduction of the frequency noise spectral density of the laser field often characterized by the Schawlow-Townes linewidth. In this paper, we demonstrate theoretically and present experimental evidence of yet another major beneficial consequence of the new laser design: a near total elimination of the contribution of amplitude-phase coupling (the Henry α parameter) to the frequency noise at “high” frequencies. This is due to an order of magnitude lowering of the relaxation resonance frequency of the laser. The practical elimination of this coupling enables yet another order of magnitude reduction of the frequency noise at high frequencies, resulting in a quantum-limited frequency noise spectral density of 130 Hz2/Hz (linewidth of 0.4 kHz) for frequencies beyond 680 MHz. This development is of key importance in the drive to semiconductor lasers with higher coherence, particularly in the context of integrated photonics with a small laser footprint.

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Foundry Development of System-On-Chip InP-Based Photonic Integrated Circuits

Cited by 30 publications

References 35 publications

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Recent progress of integrated circuits and optoelectronic chips

Consequences of Quantum Noise Control for the Relaxation Resonance Frequency and Phase Noise in Heterogeneous Silicon/III-V Lasers

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