Using hybrid functional calculation, we identify the key intrinsic defects in Cu2ZnSnS4 (CZTS), an important earth-abundant solar-cell material. The Sn-on-Zn antisite and the defect complex having three Cu atoms occupying a Sn vacancy are found to be the main deep electron traps. This result explains the optimal growth condition for CZTS, which is Cu-poor and Zn-rich as found in several recent experiments. We show that under the growth condition that minimizes the deep traps, Cu vacancy could contribute the majority of hole carriers, while Cu-on-Zn antisite will become the dominant acceptor if the growth condition favors its formation.