Four-dimensional Floquet topological insulator with an emergent second Chern number

Liu, Zheng-Rong; Chen, Rui; Zhou, Bin

doi:10.1103/physrevb.109.125303

Cited by 2 publications

(1 citation statement)

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“…Moreover, we wish to emphasize the difference between this work and our previous work. [115] This work is fundamentally different from the previous work for the following two reasons: (i) In the previous work, we studied the effects of time-periodic driving on a 4D normal insulator, while in this work, we focus on a 4D topological insulator. (ii) In the previous work, the frequency of the timeperiodic driving is smaller than the bandwidth of the static system, so we only focused on topological phase transitions at the resonant quasienergy gap.…”

Section: Conclusion and Discussionmentioning

confidence: 99%

Tuning Second Chern Number in a Four-Dimensional Topological Insulator by High-Frequency Time-Periodic Driving

Liu 刘,

Chen 陈,

Zhou 周

2024

Chinese Phys. Lett.

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In recent years, Floquet engineering has attracted considerable attention as a promising approach for tuning topological phase transitions. In this work, we investigate the effects of high-frequency time-periodic driving in a four-dimensional (4D) topological insulator, focusing on topological phase transitions at the off-resonant quasienergy gap. The 4D topological insulator hosts gapless three-dimensional boundary states, characterized by the second Chern number $C_{2}$. We demonstrate that the second Chern number of 4D topological insulators can be modulated by tuning the amplitude of time-periodic driving. This includes transitions from a topological phase with $C_{2}=\pm3$ to another topological phase with $C_{2}=\pm1$, or to a topological phase with an even second Chern number $C_{2}=\pm2$ which is absent in the 4D static system. Finally, the approximation theory in the high-frequency limit further confirms the numerical conclusions.

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Section: Conclusion and Discussionmentioning

confidence: 99%