2014 5th European Workshop on CMOS Variability (VARI) 2014
DOI: 10.1109/vari.2014.6957075
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Four-injector variability modeling of FinFET predictive technology models

Abstract: Abstract-The usual way of modeling variability using threshold voltage shift and drain current amplification is becoming inaccurate as new sources of variability appear in sub-22nm devices. In this work we apply the four-injector approach for variability modeling to the simulation of SRAMs with predictive technology models from 20nm down to 7nm nodes. We show that the SRAMs, designed following ITRS roadmap, present stability metrics higher by at least 20% compared to a classical variability modeling approach. … Show more

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