Four point probe Hall effect and resistivity measurements upon semiconductors

Semiconductor measurement technology

“…The present results are approximately correct for the case in which the probe locations are rotated away from the diagonals of the square even for small values of d/s [92][93][94]; the differences are such that Pi approximates the true resistivity for somewhat larger values of d/s. For example, for d/s = 1.5, .0000 0.0 0 5000 50.0 the value of Cg for the case of 45 deg rotation, so that the probes lie on the bisectors of the sides of the specimen, is 2.2 percent larger than the value for the probes on the diagonals.…”

“…Other early solutions based on conformal transformation [92] and the method of images [93,94] are correct but the results were not presented in a convenient form for engineering use. The present solution is based on the method of images in a complex plane.…”

Deposition of PEDOT: PSS Nanoparticles as a Conductive Microlayer Anode in OLEDs Device by Desktop Inkjet Printer

“…Therefore, the thickness of anode layer was increased from nano-to microscale range to maintain the device lifetime and to avoid crack phenomena when the device is bended [26]. Furthermore, electrical conductivity samples with different thickness were determined by four-point probe method [35,36]. The schematic diagram of the apparatus is exhibited in Figure 2.…”

Theoretical considerations about solid-state diffusion of impurities into crystals

“…The technique is, once again, very sensitive to changes in the geometry of the specimen and correction factors have been derived by Green [45] for samples of both arbitrary and given shape. A method developed by Van der Pauw [46] enables the measurement of resistivity and Hall coefficient on a sample of arbitrary shape using only one empirical correction factor.…”