Four-valued memory circuit using three-peak MOS-NDR devices and circuits

“…Compared to the MOS-NDR circuit used in Ref. [11], we use a SiGe-based HBT instead of an NMOS for the third transistor. It is because the HBT possesses the smaller turn-on voltage, higher current gain, and faster operating speed than NMOS.…”

Section: Mos-hbt-ndr Circuitmentioning

confidence: 99%

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

Gan

Liang

Tsai

et al. 2008

Solid-State Electronics

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“…Recently, some scholars have demonstrated two novel NDR circuits composed of Si-based metal-oxide-semiconductor field-effect transistor (MOS) devices and SiGebased heterojunction bipolar transistor (HBT), which are named as MOS-NDR [12,13] and MOS-HBT-NDR circuits [14,15], respectively. It allows the fabrication of NDR-based applications by standard mainstream ULSI techniques.…”

Section: Introductionmentioning

confidence: 99%

Design of monostable–bistable transition logic element using the BiCMOS-based negative differential resistance circuit

Gan

Tsai

Hsien

et al. 2011

Analog Integr Circ Sig Process

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The monostable-bistable transition logic element (MOBILE) is a promising application for negative differential resistance (NDR) circuit. Previously reported MOBILE is constructed by resonant tunneling diode (RTD) that is implemented by the molecular beam epitaxy (MBE) process. However in this paper, we first propose a NDR circuit composed of standard Si-based metal-oxide-semiconductor field-effect transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Then we demonstrate the inverter, NAND, and NOR gate operations using this MOS-HBT-NDR-based MOBILE circuit. The great advantage of this NDR-based application is that we can implement it using the standard SiGe BiCMOS process without the need for the MBE system.

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“…Recently, our research group has demonstrated two novel NDR circuits composed of Si-based metal-oxidesemiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices, which are named as MOS-NDR and MOS-HBT-NDR circuits. We have successfully demonstrated their possible application in the multiple-valued memory circuit [9], logic circuit [10], and multiplexer [11]. The fabrication of such NDR-based applications could be implemented by the standard CMOS and BiCMOS techniques.…”

Section: Introductionmentioning

confidence: 99%

Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources

Gan

Liang

Chen

2010

IEICE Trans. Inf. & Syst.

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SUMMARYThe paper demonstrates a novel multiple-valued logic (MVL) design using a three-peak negative differential resistance (NDR) circuit, which is made of several Si-based metal-oxide-semiconductor fieldeffect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices. Specifically, this three-peak NDR circuit is biased by two switch-controlled current sources. Compared to the traditional MVL circuit made of resonant tunneling diode (RTD), this multiple-peak MOS-HBT-NDR circuit has two major advantages. One is that the fabrication of this circuit can be fully implemented by the standard BiCMOS process without the need for molecular-beam epitaxy system. Another is that we can obtain more logic states than the RTD-based MVL design. In measuring, we can obtain eight logic states at the output according to a sequent control of two current sources on and off in order.

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Four-valued memory circuit using three-peak MOS-NDR devices and circuits

Cited by 18 publications

References 6 publications

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process

Design of monostable–bistable transition logic element using the BiCMOS-based negative differential resistance circuit

Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources

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