Four-wave mixing in quantum dot SOAs: Theory of carrier heating

Flayyih, Ahmed H.; Al-Shatravi, Ali Gehad; Al-Khursan, Amin H.

doi:10.1016/j.rinp.2017.03.036

Cited by 3 publications

(3 citation statements)

References 26 publications

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“…The time series solution and time recovery in QW SOAs are about sub of nanosecond it is a long time than these values in the QD (subpicosecond) [12][13]. The fast relaxation of intraband in QD gives the system fast relaxation, and then it will enhance the performance of QD devices.…”

Section: Resultsmentioning

confidence: 99%

“…(12)), the temperature of carriers is directly increased with the full width of half maximum of injected pulses. Figure (13) shows the thermal equilibrium between lattice temperature and reservoir carrier temperature, the carrier temperature at low temperature takes the same time to relax to lattice temperature (TL), these results is a contradiction in QDs [11]. VII.…”

Section: Carrier Temperature In Qwmentioning

confidence: 99%

See 1 more Smart Citation

Carrier dynamic and carrier Temperature in Quantum Well

Musa¹,

Flayyih²

2022

UTJsci

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Carrier temperature in quantum well (QW)semiconductor optical amplifier (SOA) has been studied,depending density matrix theory (DMT) and carrier dynamicin quantum well. The effect of volume carrier density, dopingon effect, pulse shape, nonradiative relaxation, and nonlineargain coefficients on the carrier temperature and carrierheating has been investigated. The theoretical results showthat; the time recovery increases straightforward withnonradiative recombination, where the relaxation time ofnonradiative recombination reduces the rate of carrieroccupation in quantum states. Also, the carrier temperatureincreases with carrier density, free carrier absorption, carrierheating lifetime and reduces with pulse shape of pump pulses

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Section: Resultsmentioning

confidence: 99%

Section: Carrier Temperature In Qwmentioning

confidence: 99%

Carrier dynamic and carrier Temperature in Quantum Well

Musa¹,

Flayyih²

2022

UTJsci

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“…Quantum dot semiconductor optical amplifiers (QD‐SOAs) have attracted great attention due to their promising features that could provide breakthrough improvement of semiconductor optical amplifiers (SOAs) in future optical networks compared with bulk and quantum well SOAs 1,2 . Semiconductor nitrides are very promising materials for their potential use in high‐temperature optoelectronic devices 3,4 .…”

Section: Introductionmentioning

confidence: 99%

Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

Al-Shatravi

Abdullah

Al-Khursan

2020

Micro & Optical Tech Letters

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GaN/Al0.5Ga0.5N and InN/Al0.5Ga0.5N as a III‐nitride quantum dot semiconductor optical amplifiers (QD‐SOAs) are studied in detail in this paper. The optical gain, spontaneous emission rate, and lineshape function are calculated using non‐Markovian relaxation compared with Markovian one. Gain is then connected with the rate equations model to obtain a dB gain, output power, and shot noise in these SOAs. GaN peaked at 351 nm which is preferred in optical coherence tomography applications. InN is peaked at 1028 nm which can be used in gas detection and environmental pollution monitoring. Both structures studied have high gain and low noise and nearly equivalent TE and TM gain which makes them adequate for the use in both these two modes. These calculations show the importance of InN and GaN QD nanostructure in the applications.

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The effect of doping on the electrons and holes in quantum dot semiconductor optical amplifiers

Flayyih

2023

Journal of Optical Communications

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The doping effect on the reservoir carrier temperature of the electron and hole in quantum dot optical amplifiers (QD SOAs) has been formalized and modeling, taking into account the most of carrier heating (CH) contributions such as; free carrier absorption, carrier heating time relaxation, interdot relaxation time, occupation probability of dot level, injected current and electron-hole interaction. The theoretical simulation shows the carrier temperature increasing straight forward with increasing the surface density of the donor and accepter which had not studied earlier as the best of our knowledge. It clears that, the surface carrier concentration of donor or acceptor atoms supplying more hot carriers for wetting layer (WL) which is leading an increasing the carrier temperature. In other word, the long life time of carriers from WL to Quantum Dot (QD) states is very high. Consequently, the collision of carriers and nonradiative relaxation are increasing the CH effect. Also, the majority of carrier is responsible on the increasing of electron or hole temperature, so the variation electron temperature in N-type is higher than hole in valence band, while the reverse is done with doping with P-type.

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Four-wave mixing in quantum dot SOAs: Theory of carrier heating

Cited by 3 publications

References 26 publications

Carrier dynamic and carrier Temperature in Quantum Well

Carrier dynamic and carrier Temperature in Quantum Well

Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

The effect of doping on the electrons and holes in quantum dot semiconductor optical amplifiers

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