Fourier-IR Spectroscopy of Photoresist/Silicon Structures for Explosive Lithography

Brinkevich, D. I.; Grinyuk, E. V.; Brinkevich, S. D.; Prosolovich, V. S.; Kolos, V. V.; Zubova, O. A.; Lastovskii, S. B.

doi:10.1007/s10812-024-01657-4

J Appl Spectrosc

2024

DOI: 10.1007/s10812-024-01657-4

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Fourier-IR Spectroscopy of Photoresist/Silicon Structures for Explosive Lithography

D. I. Brinkevich,

E. V. Grinyuk,

S. D. Brinkevich

et al.

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2024

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Cited by 2 publications

References 14 publications

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INFRARED FOURIER SPECTROSCOPY OF DIFFUSE REFLECTION OF THE AZ nLOF SERIES NEGATIVE PHOTORESISTS FILMS ON MONOCRYSTALLINE SILICON

BRINKEVICH,

PROSOLOVICH,

KOLOS

et al. 2024

HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENC

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Films of the AZ nLOF 2020, AZ nLOF 2070 and AZ nLOF 5510 negative photoresists (PR) with a thickness of 0,95 – 6,1 μm, deposited on the surface of silicon wafers by the centrifugation method, were studied by the method of IR-Fourier diffuse reflection spectroscopy. In the diffuse reflectance spectra of PR/silicon structures, absorption bands were observed against the background of interference fringes. It allows the technique to be used to measure film thickness or its refractive index. The most intense bands in the AZ nLOF series PR spectra are the bands of stretching vibrations of the aromatic ring, pulsation vibrations of the carbon skeleton of the aromatic ring, a wide structured band with several maxima in the range of 1050 – 1270 cm–1 and a band associated with the CH2 bridge. The structure of the absorption spectrum of photoresists of the AZ nLOF series is similar to the structure of the spectrum of phenol-formaldehyde photoresist FP9120. It was shown that the vibration band of CH3 groups at 2945 cm-1 is due to the solvent.

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INFRARED FOURIER SPECTROSCOPY OF DIFFUSE REFLECTION OF THE AZ nLOF SERIES NEGATIVE PHOTORESISTS FILMS ON MONOCRYSTALLINE SILICON

BRINKEVICH,

PROSOLOVICH,

KOLOS

et al. 2024

HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENC

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Strength Properties of Diazoquinone Photoresist Fp9120 Films On Monocrystalline Silicon Implanted With Antimony Ions

VABISHCHEVICH,

BRINKEVICH

et al. 2024

HERALD OF POLOTSK STATE UNIVERSITY. Series С FUNDAMENTAL SCIENC

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The modification of the strength properties of films implanted with Sb+ ions of diazoquinone-novolac photoresist FP9120 on monocrystalline silicon during long-term storage was investigated by the indentation method. The dependence of microhardness on the load after implantation was nonmonotonic, due to the presence of elastic stresses at the photoresist/silicon interface. During long-term storage, their relaxation was observed, which leads to the disappearance of the non-monotonicity of the microhardness dependences on the load. The crosslinking of phenol-formaldehyde resin molecules during long-term storage was also noted. This process was stimulated by the decomposition of diazoquinone during ion implantation. During storage, the implanted photoresistive film becomes less susceptible to elastoplastic recovery after the load is removed.

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Fourier-IR Spectroscopy of Photoresist/Silicon Structures for Explosive Lithography

Cited by 2 publications

References 14 publications

INFRARED FOURIER SPECTROSCOPY OF DIFFUSE REFLECTION OF THE AZ nLOF SERIES NEGATIVE PHOTORESISTS FILMS ON MONOCRYSTALLINE SILICON

INFRARED FOURIER SPECTROSCOPY OF DIFFUSE REFLECTION OF THE AZ nLOF SERIES NEGATIVE PHOTORESISTS FILMS ON MONOCRYSTALLINE SILICON

Strength Properties of Diazoquinone Photoresist Fp9120 Films On Monocrystalline Silicon Implanted With Antimony Ions

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