Fourier Transform Photocurrent Spectroscopy on Non-Crystalline Semiconductors

Holovský, Jakub

doi:10.5772/14921

Cited by 12 publications

(10 citation statements)

References 35 publications

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“…To obtain the absolute variations of α, the FTPS spectrum has to be calibrated from transmission/reflection measurements. For a review of the FTPS technique and its application to thin films, see, for instance, the work of Holovski …”

Section: Experimental Sectionmentioning

confidence: 99%

Influence of Environment and Light-Stress on the Optoelectronic Properties of Triple-Cation Perovskite Thin Films

Lin

Cacovich

Rebai

et al. 2020

ACS Appl. Mater. Interfaces

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In this work, we study the transport properties of triple-cation halide perovskite thin films and their evolution when exposed to air or vacuum and after light-soaking. Transport parameters were investigated by steady-state dark and photocurrent methods as well as by the steady-state photocarrier grating experiment (SSPG) from which the ambipolar diffusion length of thin film materials is estimated. Combined with other characterization measurements, such as photoluminescence and Fourier transform photocurrent spectroscopy, these techniques demonstrate that air plays an important role in the passivation of the surface trap states of the perovskite films. The competition between passivation and degradation of the films under light-soaking was also deeply investigated. Moreover, we show that the degradation of the transport parameters upon light-soaking could be linked mainly to a degradation of the carrier mobility instead of their lifetime.

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Section: Experimental Sectionmentioning

confidence: 99%

Influence of Environment and Light-Stress on the Optoelectronic Properties of Triple-Cation Perovskite Thin Films

Lin

Cacovich

Rebai

et al. 2020

ACS Appl. Mater. Interfaces

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“…The cells areas were defined by using a shadow mask (0.126 cm 2 ). Fourier transform photocurrent spectroscopy (FTPS) [18] was used to determine the effect of the TCO substrate on the absorption coefficient (α) and defect density of pm-Si:H in the cells. Dark conductivity (σ d ) of p-type silicon oxide on Corning 7059 glass was measured using a coplanar Al electrode configuration.…”

Section: Methodsmentioning

confidence: 99%

Substrate and p-layer effects on polymorphous silicon solar cells

et al. 2014

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The influence of textured transparent conducting oxide (TCO) substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H) solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD) boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

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“…Fourier transform photocurrent spectroscopy (FTPS) enables fast and highly sensitive measurements of photocurrent spectra over several orders of magnitude [49]. It can be used for the characterization of electrically active defects in silicon thin films [50], since it allows the determination of sub-band gap photocurrent features related to sub-band gap electronic states created by defects in the material.…”

Section: Methodsmentioning

confidence: 99%

“…It can be used for the characterization of electrically active defects in silicon thin films [50], since it allows the determination of sub-band gap photocurrent features related to sub-band gap electronic states created by defects in the material. The principle of this technique is described in [49] and [50]. Coplanar interdigitated aluminum contacts separated by 100 μm have been evaporated on top of uniformly doped (~10 16 cm − 3 ) 10 μm-thick, polycrystalline silicon layers.…”

Section: Methodsmentioning

confidence: 99%

“…Note that the Urbach parameter of the non-hydrogenated fine grained ndoped and p-doped layers is higher than 50 meV, which is usually defined as the upper limit for a good quality non-crystalline silicon material [49]. Hydrogenation of the poly-Si layers is seen to lead to a decrease in the Urbach edge parameter, from 68.1 meV to 27.3 meV for the p-type layer, and from 69.8 to 44.8 n-type one.…”

Section: Effect Of Hydrogenation On N-and P-doped Polycrystalline Silmentioning

confidence: 99%

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Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells

et al. 2015

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Fourier Transform Photocurrent Spectroscopy on Non-Crystalline Semiconductors

Cited by 12 publications

References 35 publications

Influence of Environment and Light-Stress on the Optoelectronic Properties of Triple-Cation Perovskite Thin Films

Influence of Environment and Light-Stress on the Optoelectronic Properties of Triple-Cation Perovskite Thin Films

Substrate and p-layer effects on polymorphous silicon solar cells

Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells

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