Fowler-nordheim erasing time prediction in flash memory

Canet, P.; Bouquet, Valérie; Lalande, F.; Devin, J.; Leconte, Baptiste

doi:10.1109/nvmt.2005.1541380

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…The concept of the NVRAM without a control gate uses three transistors for coupling capacitor (C c ), tunneling capacitor (C t ) , and the read transistor (P r ) connected with an SFP. The program and erase steps into the SFP occur by the Fowler-Nordheim (FN) tunneling mechanism [46]- [48].…”

Section: Methodsmentioning

confidence: 99%

A Unified NVRAM and TRNG in Standard CMOS Technology

et al. 2022

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Section: Methodsmentioning

confidence: 99%

A Unified NVRAM and TRNG in Standard CMOS Technology

et al. 2022

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Impact of X-Ray Tomography on the Reliability of Integrated Circuits

Alam

Shen

Asadizanjani

et al. 2017

IEEE Trans. Device Mater. Relib.

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Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

Dogan

Alam

Asadizanjani

et al. 2015

International Symposium for Testing and Failure Analysis

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X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

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Fowler-nordheim erasing time prediction in flash memory

Cited by 3 publications

References 5 publications

A Unified NVRAM and TRNG in Standard CMOS Technology

A Unified NVRAM and TRNG in Standard CMOS Technology

Impact of X-Ray Tomography on the Reliability of Integrated Circuits

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

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