Fowler-Nordheim tunneling in β-Ga₂O₃/SrRuO₃ Schottky interfaces

Abstract

Interfaces in heterostructures always emerge as prototype electronic devices with tunable functionality. Fundamental properties of the interfaces can be finely manipulated by epitaxy engineering. Recently, the heterostructures based on Ga2O3, an ultra-wide bandgap semiconductor, are reported for high power devices applications. Herein, we demonstrate a heterostructure of β-Ga2O3/SrRuO3 integrated on c-plane sapphire, the high density of edge dislocations is evidenced in the heterostructure interfaces. Apart from the dominated Schottky emission mechanism, the Fowler-Nordheim tunneling is also revealed by the leakage current analysis, which may be ascribed to the edge dislocations at the interfaces. These results boost the basic understanding on the ultra-wide bandgap materials and devices.