2018
DOI: 10.1109/jsen.2018.2795098
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FPGA Implementation of Steinhart–Hart Equation for Accurate Thermistor Linearization

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Cited by 22 publications
(9 citation statements)
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“…Many datasheets, in addition, offer parameters for the analytical description of R(T). The Steinhart-Hart equation [29] yields a very close match [22] with the actual measurement data in the whole nominal temperature range of the NTC thermistor:…”
Section: Ntc Thermistor Basicsmentioning
confidence: 70%
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“…Many datasheets, in addition, offer parameters for the analytical description of R(T). The Steinhart-Hart equation [29] yields a very close match [22] with the actual measurement data in the whole nominal temperature range of the NTC thermistor:…”
Section: Ntc Thermistor Basicsmentioning
confidence: 70%
“…A distinctive feature of thermistors is the highly non-linear dependence of resistance with temperature, which is a fact to consider even with modern cutting-edge materials and manufacturing technologies [19]. To compensate for this, various approaches have been made to linearise the response-from hardware-based signal conditioning circuits to computer-based solutions or their combinations, implementing modern techniques, such as artificial neural networks [20] and field-programmable arrays (FPGA) [21][22][23]. On the hardware side, common solutions mainly rely on conditioning circuits implementing standalone operational amplifiers (OP ap) circuits [23,24] or voltage-controlled oscillators using dedicated timer ICs (555) [25][26][27], where a thermistor is connected to a frequency-determining input stage of the timing circuit, thus resulting in a more or less linear dependence of output frequency with temperature.…”
Section: Introductionmentioning
confidence: 99%
“…The linearization of this equation allows the determination of the sensitivity of the thermistor, quantified by the β parameter (Equation (2)). An alternative model fitting the dependence of thermistor resistance with temperature is the Steinhart–Hart equation, a third order polynomial that can better fit the variation of resistance over a wider temperature range (Equation (3)) [ 19 , 20 ]. Accordingly, both models were used to fit the temperature dependent resistance of the BDD film ( Figure 3 ).…”
Section: Resultsmentioning
confidence: 99%
“…It was found that reduced graphene oxide (RGO) with outstanding carrier mobility and high surface-to-volume ratio had been applied in material science, energy, and biomedicine [21,22]. The composite material composed of RGO and NaYF 4 :Yb 3+ ,Er 3+ will show bi-functional properties such as fluorescence and negative temperature coefficient (NTC) resistive element [23,24,25]. Since the fluorescence features of NaYF 4 :Yb 3+ ,Er 3+ are various, and the conductive characteristics of RGO can be affected by external disturbance of composite on account of its low density state surrounding the Dirac point [22], the resistance of composite material (RGO-NaYF 4 :Yb 3+ ,Er 3+ ) will be detected by using the spectrum property of NaYF 4 :Yb 3+ ,Er 3+ nanoparticles.…”
Section: Introductionmentioning
confidence: 99%
“…The FIR between I U and I L will change regularly and the temperature dependent FIR can be obtained according to Boltzmann distributing law [10,11,12], as shown in Figure 2c. The relation between temperature and resistance can be obtained from dependence of resistance on temperature according to Steinhart–Hart formula [23,24,25] in Figure 2d. Based on the above analysis, the FIR and relative sensitivity as a function of resistance can be derived, as shown in Figure 2e,f.…”
Section: Introductionmentioning
confidence: 99%