Fractal Dimension of Thin-film Surfaces Obtained by Fourier Spectral Analysis

Zahn, W.; Zösch, Antje

doi:10.1002/(sici)1096-9918(199706)25:7/8<488::aid-sia255>3.0.co;2-n

Cited by 7 publications

(1 citation statement)

References 9 publications

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“…Fractal dimensions have been used widely to study the growth process of thin films [10][11][12] at interfaces with crystalline substrates. Three main growth models can be used to describe thin film growth.…”

Section: Resultsmentioning

confidence: 99%

Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

Ndoye

Tapily

Orłowski

et al. 2011

J. Electrochem. Soc.

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Niobium was deposited by physical vapor deposition (PVD) using e-beam evaporation on bare (100) silicon substrates and SiO2 surfaces. The formation of niobium silicide was investigated by annealing PVD Nb films in the temperatures range 400–1000°C. At all elevated annealing temperatures the resistivity of Nb silicide is substantially higher than that of Nb. The Nb silicidation as a function of temperature has been investigated and different NbXSiy compounds have been characterized. It has been observed that the annealing of the Nb film on Si is accompanied by a strong volume expansion of about 2.5 of the resulting reacted film. The films’ structural properties were studied using X-Ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM), which was not previously presented in the context of the extant NbSi literature. The X-Ray diffraction characterization of the Nb on Si sample annealed at 1000°C, showed the presence of hexagonal Nb5Si3 phases, with a dominant peak at the (200) plane, and NbSi2 phases. Fractal dimension calculations indicate a distinct transition from Stranski-Krastanov to Volmer-Weber film growth for NbSi formation at the annealing temperature of 600°C and above.

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Section: Resultsmentioning

confidence: 99%

Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

Ndoye

Tapily

Orłowski

et al. 2011

J. Electrochem. Soc.

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Identification of the dynamics of plasma-induced damage in a CuInSe2 thin film by fractal processing

Kurt¹,

Salamov

2006

Cryst. Res. Technol.

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A planar ionization system for rapid visualization and recording the resistance inhomogeneity and photoconductivity distribution in a chalcopyrite-type semiconductor (CuInSe 2 ) copper-indium-diselenide film is studied. A part of the discharge energy is transferred to the electrodes of the system by the bombardment of the electrode surface due to an electron-ion flow. This process leads to the sputtering mechanism of the electrode surface material. It is shown that the plasma-induced damage (PID) in a CuInSe 2 thin film was primarily due to the effectiveness of sputtering and physico-chemical interactions in the discharge gap during the transition from Townsend to the glow type. At the same time a nondestructive method is suggested for the analysis of the dynamics of PID in the CuInSe 2 thin film by fractal processing in the planar ionization system. Some properties of the device have been evaluated, such as a relative change of the resistance inhomogeneity is determined by a relative change of discharge light emission (DLE) intensity when a current is passed through an ionization cell. For the quantitative analysis of the change in the dynamic feature of PID of CuInSe 2 thin films, fractal dimension analysis was used following the records of the DLE intensity. The quality of the film was analyzed using both the profile and spatial distributed DLE intensities data showing the surface inhomogeneity and damage in the thin film as function of time. Thus, by using fractal concept, the order of the surface damage and the quality of the CuInSe 2 as function of time can be assessed exactly and the size and location of the surface inhomogeneities in thin film to be ascertained.

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Performance assessment of methods for estimation of fractal dimension from scanning electron microscope images

Risović

Pavlović²

2013

Scanning

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Processing of gray scale images in order to determine the corresponding fractal dimension is very important due to widespread use of imaging technologies and application of fractal analysis in many areas of science, technology, and medicine. To this end, many methods for estimation of fractal dimension from gray scale images have been developed and routinely used. Unfortunately different methods (dimension estimators) often yield significantly different results in a manner that makes interpretation difficult. Here, we report results of comparative assessment of performance of several most frequently used algorithms/methods for estimation of fractal dimension. To that purpose, we have used scanning electron microscope images of aluminum oxide surfaces with different fractal dimensions. The performance of algorithms/methods was evaluated using the statistical Z-score approach. The differences between performances of six various methods are discussed and further compared with results obtained by electrochemical impedance spectroscopy on the same samples. The analysis of results shows that the performance of investigated algorithms varies considerably and that systematically erroneous fractal dimensions could be estimated using certain methods. The differential cube counting, triangulation, and box counting algorithms showed satisfactory performance in the whole investigated range of fractal dimensions. Difference statistic is proved to be less reliable generating 4% of unsatisfactory results. The performances of the Power spectrum, Partitioning and EIS were unsatisfactory in 29%, 38%, and 75% of estimations, respectively. The results of this study should be useful and provide guidelines to researchers using/attempting fractal analysis of images obtained by scanning microscopy or atomic force microscopy.

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Fractal Dimension of Thin-film Surfaces Obtained by Fourier Spectral Analysis

Cited by 7 publications

References 9 publications

Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

Silicidation of Niobium Deposited on Silicon by Physical Vapor Deposition

Identification of the dynamics of plasma-induced damage in a CuInSe2 thin film by fractal processing

Performance assessment of methods for estimation of fractal dimension from scanning electron microscope images

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