Fracture surface analysis and quantitative characterization of gallium arsenide III-V semiconductors using fractography

Abstract

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Effects of A sTian, Chen, Bian et al. 2024J. Phys.: Condens. Matter0000View full textAdd to dashboardCite

“…bandgap width. Metal-semiconductor field-effect transistors [1], high-electron-mobility transistors [2] and other devices prepared using GaAs crystals play an irreplaceable role in aerospace [3], mobile communications, new energy industry, and other fields. Devices such as Schottky barrier diodes fabricated using GaAs thin film solar cells [4,5] have been extensively used in integrated circuits and solar energy industries in recent years.…”

Indentation fracture toughness of semiconducting gallium arsenide at elevated temperatures

“…Despite GaAs's extensive utilization, the fracture behavior of GaAs remains poorly understood, particularly at typical operating temperatures, thereby complicating failure analysis. The limited literature available on the topic describes either the material's behavior at temperatures well-above customary application [6]- [8], or at room-temperature [9]- [13].…”

“…The elastic components are typically harmonized in the literature, and often no crystallographic reference is given with respect to the specimen/crystal orientation apart from the recent quantitative studies on GaAs [13]. The harmonization of GaAs's mechanical properties combined with the plethora of the methods/models developed to estimate the fracture toughness from indentations have led to considerable scatter in the reported magnitudes of K1c [9], [26]- [28].…”

Energy consumption analysis of different scratching methods in GaAs mechanical cleavage processing

“…As for cleavage operation, Zhao et al studied the effects of crack velocity on cleavage planes [13]. A qualitative study by Moulins described a method to present the relationship between the GaAs fractographic features and mechanical fracture strength [14]. A recent study by Gao et al provided both systematic theoretical models and calculation results for certain key mechanical properties of GaAs [15].…”