1965
DOI: 10.1103/physrev.139.a560
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Franz-Keldysh Effect of the Refractive Index in Semiconductors

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Cited by 181 publications
(43 citation statements)
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“…The Franz-Keldysh effect leads to oscillations in the carrier transition probability for energies that are greater than the band gap and tunneling of the electron state into the forbidden band due to band-bending below the band gap in the presence of an applied electric field. The absorption coefficient is given by [28] α(ω, E) = Cθ…”
Section: ) Incomplete Ionizationmentioning
confidence: 99%
“…The Franz-Keldysh effect leads to oscillations in the carrier transition probability for energies that are greater than the band gap and tunneling of the electron state into the forbidden band due to band-bending below the band gap in the presence of an applied electric field. The absorption coefficient is given by [28] α(ω, E) = Cθ…”
Section: ) Incomplete Ionizationmentioning
confidence: 99%
“…The effect of an external electromagnetic field on nonrelativistic charged particles systems (like atoms, ions and atomic nucleuses) has being investigated systematically for a long time (see, for example, [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15] ). Though this problem has a long history, a set of questions as before requires additional studying.…”
Section: Imentioning
confidence: 99%
“…change in optical absorption with the presence of electric fields in the vertical direction, [7][8]15 but most of these works are in the infrared or even lower energy ranges, the tuning efficiency is often small (no more than few percent), or the structure is too bulky for integration with CMOS circuits.…”
mentioning
confidence: 99%